Thomson-csf

Armand Tardella

Borge Vinter

Thierry Weil

A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes:

Device for the multiplication of charge carriers by an avalanche

A heterojunction semiconductor device which has a dual channel with a high mobility layer, a barrier layer and a low mobility layer. The barrier layer is thin enough for the carriers to pass from the low mobility layer to the high mobility layer by tunnel effect, during variations of the polarization electrical field of the dual channel. The device can be used as field effect transistors with a quick response time, without variation in the charge of the channel but with a variation in the mobility of the carriers; or as negative transconductance devices for oscillators or complementary transistors in integrated circuits.

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Guyancourt, France

Armand Tardella