Agere Systems Inc.

Alcatel-lucent USA Inc.

Lucent Technologies Inc.

Other

Arman Gasparyan

Sungho Jin

Herbert R Shea

Joseph Ashley Taylor

Donald Weiss

Wei Zhu

Thomas Nikita Krupenkin

Maria Elina Simon

Robert Bruce Van Dover

John VanAtta Gates

Susanne C Arney

Omar D López

Vladimir Anatolyevich Aksyuk

Timofei Nikita Kroupenkine

Mark Anthony Paczkowski

Edward Chan

The present invention provides a bi-directional microelectromechanical element, a microelectromechanical switch including the bi-directional element, and a method to reduce mechanical creep in the bi-directional element. In one embodiment, the bi-directional microelectromechanical element includes a cold beam having a free end and a first end connected to a cold beam anchor. The cold beam anchor is attached to a substrate. A first beam pair is coupled to the cold beam by a free end tether and is configured to elongate when heated thereby to a greater temperature than a temperature of the cold beam. A second beam pair is located on an opposing side of the cold beam from the first beam pair and is coupled to the first beam pair and the cold beam by the free end tether. The second beam pair is configured to elongate when heated thereby to the greater temperature.

MEMS device with bi-directional element

An apparatus comprising a liquid switch. The liquid switch comprises a substrate having a surface with first and second regions thereon and a fluid configured to contact both of the regions. The regions each comprise electrically connected fluid-support-structures, wherein each of the fluid-support-structures have at least one dimension of about 1 millimeter or less. The regions are electrically isolated from each other.

Liquid switch

In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

Providing a charge dissipation structure for an electrostatically driven device

The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.

Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor

A liquid electrical switch is disclosed that uses a plurality of droplets of conducting liquid to form an electrical path. In a first embodiment, at least a first voltage differential is used to create a separation distance between two droplets. The droplets are illustratively contained within a housing and surrounded by an immiscible, insulating liquid. In this embodiment, the at least a first voltage differential draws at least a portion of at least one of the droplets away from a second droplet, thus preventing electrical current from flowing from the at least one droplet to the second droplet. In another embodiment, the at least a first voltage differential is changed in a way such that at least one liquid droplet is made to come into contact with a second droplet, thus creating an electrical path between the two droplets.

Liquid electrical microswitch

A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems ('MEMS') device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

Charge dissipation in electrostatically driven devices

The invention addresses a micro-electro-mechanical (MEMS) device, or an array of such devices, for use in an optical communication system and a method of manufacture therefore. An embodiment of the device includes a moveable element support structure, a moveable element and torsional members that couple the moveable element support structure and the moveable element and allow the moveable element to gimbal with respect to the support structure. The inventive device includes torsional members that are substantially free of corrosion thereby producing a device with improved response characteristics. The method includes using an etchant that substantially inhibits corrosion of the torsional members.

Micro-electro-mechanical device having improved torsional members and a method of manufacturing therefor

A driver for use with a micro-electromechanical system (MEMS) device, method of operation thereof and a MEMS device employing the driver and method. In one embodiment, the driver includes an actuation subsystem that provides an actuation voltage to alter an angle of an optical element of the MEMS device. The driver also includes a bias subsystem, coupled to the actuation subsystem, that applies a bias voltage between the optical element and the actuation subsystem, thereby reducing the actuation voltage.

Growing community of inventors

New Providence, NJ, United States of America

Arman Gasparyan