United States of America As Represented by the Secretary of the Air Force

Rockwell International Corporation

Arlen J Hughes

Virgil H Strahan

Arthur C Thorsen, Jr

A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor.

Radiation-induced substrate photo-current compensation apparatus

A semiconductor means comprising a substrate base and a piezoresistive film on the substrate wherein the material of the substrate is different in chemical formulation from the film. This results in a film having a high carrier mobility in which a semiconductor device can be oriented so that the direction of current flow in the device is in the direction of greatest carrier mobility. Performance of the device can be further improved when off-axis-symmetry films are formed on certain substrates. The method of formation of these semiconductor means includes determining the high carrier mobility directions by x-ray techniques and orienting the various masks or other means used to infuse the devices with dopant materials so that the device thus formed in the film will take advantage of high carrier mobility direction and hence higher performance semiconductor devices.

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Tustin, CA, United States of America

Arlen J Hughes