Tokyo Electron Limited

Arkalgud Sitaram

Christopher Netzband

Jacques Faguet

Paul Abel

Sang Cheol Han

Qi Wang

Christophe Vallee

Gabriel Gibney

A method of etching a metal includes performing at least two cycles of an etch process. A cycle of the etch process includes: performing a surface modification on an exposed surface of a metal layer over a substrate, performing a hydrogen treatment on the metal layer, and performing a cleaning treatment on the metal layer. The hydrogen treatment forms a layer of reaction products on the metal layer. The cleaning treatment removes the layer of reaction products.

Method for etching of metal

The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

Methods for wet atomic layer etching of copper

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Albany, NY, United States of America

Arkalgud Sitaram