Applied Materials, Inc.

Arkajit Roy Barman

Ananthkrishna Jupudi

Yueh Sheng Ow

Glen T Mori

Ke Chang

Aksel Kitowski

Loke Yuen Wong

Deenesh Padhi

Ganesh Balasubramanian

Yue Chen

Xinhai Han

Zhijun Jiang

Sanjay G Kamath

Daemian Raj Benjamin Raj

Hidehiro Kojiri

Nikhil Sudhindrarao Jorapur

Madhu Santosh Kumar Mutyala

Vu Ngoc Tran Nguyen

Chuan Ying Wang

Thian Choi Lim

Miguel S Fung

Jose Angelo Olave

Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

Multi channel splitter spool

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Method of forming film stacks with reduced defects

Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Variable frequency microwave (VFM) processes and applications in semiconductor thin film fabrications

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Singapore, Singapore

Arkajit Roy Barman