Qualcomm Incorporated

Ericsson Gmbh

Mixcomm, Inc.

Telefonaktiebolaget Lm Ericsson (Publ)

Nxp USA, Inc.

Qualcomm Mems Technologies, Inc.

Aristotele Hadjichristos

Nathan M Pletcher

Babak Nejati

Gurkanwal Singh Sahota

David R Pehlke

Marco Cassia

Yu Zhao

Chang-Ho Lee

Francesco Carobolante

Paolo Menegoli

Fabio Alessio Marino

Ryan David Lane

Puay Hoe See

Qingqing Liang

Thomas Domenick Marra

Thomas Myers

Yunseo Park

Wenjun Su

Minsik Ahn

Narasimhulu Kanike

Frank A Lane

Bhushan Shanti Asuri

Chiewcharn Narathong

Sinan Goktepeli

Young Kyu Song

Harish Krishnaswamy

Aleksandar Miodrag Tasic

Arun Sridhar Natarajan

Xiaonan Zhang

Junxiong Deng

Wei Zhuo

Guy Klemens

Scott R Justice

Jeongwon Cha

Liang Zhao

Jonghae Kim

Erik L Bengtsson

William O Camp, Jr

Mario Francisco Velez

Evgeni Petrovich Gousev

Je-Hsiung Lan

Ravindra Vaman Shenoy

Vladimir Aparin

Milind Shah

Vikas Vinayak

Gary John Ballantyne

Frederic Bossu

Prasad Srinivasa Siva Gudem

Steven C Ciccarelli

Chi Shun Lo

Christian Holenstein

Zhang Jin

Jose Cabanillas

Kyu Hwan An

I-Hsiang Lin

Sai-Wang Tam

Justin Phelps Black

Alberto Cicalini

Sang-Oh Lee

Tzu-Wang Pan

Maulin Pareshbhai Bhagat

Solti Peng

Antonino Scuderi

Norman L Frederick, Jr

Calogero Davide Presti

Plamen Vassilev Kolev

Hongyan Yan

Steven Daniel

Mohammad Farazian

Ockgoo Lee

Woonyun Kim

Xiaoming Chen

Krishnan Tiruchi Natarajan

Conor Donovan

Wesley Alan Sampson

Thomas Andrew Myers

William Camp

Guangming Yin

Zhijie Xiong

Per O Kristensen

Chris W Angell

Norman L Frederick

John Quigley

Mohan V Puntambekar

David J Wilding

Je-Hsiung Jeffrey Lan

Thomas D Marra

Thomas A Myers

Tsu-Wang Pan

Aparin Vladimir

Provided is a contactless connector that includes an antenna system and a wireless transceiver coupled to the antenna system and configured to simultaneously transmit a transmission signal and receive a received signal through the antenna system. The wireless transceiver includes a transformer, a wide-band phase shifter and a combiner. The transformer has a primary coil with a center tap to which the transmission signal is coupled and a first end that is coupled to the antenna system. The transmission signal also is coupled to an input of the wide-band phase shifter. The transformer also has a secondary coil, an output of the secondary coil is coupled to a first input of the combiner, an output of the wide-band phase shifter is coupled to a second input of a combiner, and an output of the combiner provides a self-interference-canceled version of the received signal.

Full-duplex contactless connectors

Multiple low noise amplifiers (LNAs) with combined outputs are disclosed. In an exemplary design, an apparatus includes a front-end module and an integrated circuit (IC). The front-end module includes a plurality of LNAs having outputs that are combined. The IC includes receive circuits coupled to the plurality of LNAs via a single interconnection. In an exemplary design, each of the plurality of LNAs may be enabled or disabled via a respective control signal for that LNA. The front-end module may also include receive filters coupled to the plurality of LNAs and a switchplexer coupled to the receive filters. The front-end module may further include at least one power amplifier, and the IC may further include transmit circuits coupled to the at least one power amplifier.

Low noise amplifiers with combined outputs

Methods and apparatus for calibrating signal processing chains using cross coupling between polarizations are described. Various exemplary methods and apparatus, in accordance with the present invention, are well suited for use in communications devices using beamforming and including arrays of TX/RX front ends, e.g., a first plurality of horizontal polarization front ends and a second plurality of vertical polarization front ends.

Array calibration thru polarization cross-coupling

Controllable radio frequency power amplifiers (RFPAs), e.g., in a Hybrid-MIMO array, which are being driven at lower power levels, are operated at conditions such that their inherent EVM and ACLR are intentionally further increased. This increase of inherent EVM and ACLR is done in a precise manner, and the increased inherent EVM and ACLR are cancelled or reduced by the EVM and ACLR of the input Array DPD signal. The net result is improved EVM and ACLR performance over a broader range of angles. Exemplary methods and apparatus for increasing distortion include individual or combinations of: i) changing the DC bias a RFPA based on average operating power level; ii) changing supply voltage, e.g. Vcc, of a RFPA based on average operating power level, iii) adding a controllable non-linear element, such as a diode or varactor, at the input of the RFPA, based on the average operating power.

Methods and apparatus for using signal pre-distortion with individual power amplifier (PA) control

Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

Buried oxide transcap devices

Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

Back silicided variable capacitor devices

Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a first semiconductor region; a first non-insulative region disposed adjacent to a first lateral side of the first semiconductor region; a second non-insulative region disposed adjacent to a second lateral side of the first semiconductor region, the second lateral side being opposite to the first lateral side; a second semiconductor region disposed adjacent to a third lateral side of the first semiconductor region, the second semiconductor region and the first semiconductor region having at least one of different doping types or different doping concentrations; an insulative layer adjacent to a top side of the first semiconductor region; and a third non-insulative region, the insulative layer being disposed between the third non-insulative region and the first semiconductor region.

Lateral devices in silicon-on-insulator (SOI) technology

A global navigation satellite system receiver with filter bypass mode for improved sensitivity is disclosed. In an aspect, an apparatus is provided that includes a non-bypass signal path coupled to a receiver, the non-bypass signal path comprising a filter. The apparatus also includes a bypass signal path coupled to the receiver, the bypass signal path configure to bypass the filter, and a switch to couple an antenna to the non-bypass signal path during time intervals when signals transmitted by an unrelated local transmitter are transmitted with a signal power that exceeds a selected threshold, and to couple the antenna to the bypass signal path during other time intervals.

Global navigation satellite system receiver with filter bypass mode for improved sensitivity

Techniques to implement a filter for a selected signal path by reusing a circuit component in an unselected signal path are disclosed. In an exemplary design, an apparatus includes first, second, and third circuits. The first circuit passes a first radio frequency (RF) signal to an antenna when a first signal path is selected. The second circuit passes a second RF signal to the antenna when a second signal path is selected. The third circuit is selectively coupled to the first circuit, e.g., via a switch. The first and third circuits form a filter for the second RF signal (e.g., to attenuate a harmonic of the second RF signal) when the second signal path is selected and the first signal path is unselected. The first circuit may include a series inductor, and the third circuit may include a shunt capacitor.

Filters for multi-band wireless device

Techniques for protecting a power amplifier (PA) are described. In an exemplary design, an apparatus includes (i) a PA module to amplify an input RF signal and provide an output RF signal and (ii) a protection circuit to control a transmitter gain to protect the PA module against high peak voltage. In an exemplary design, the protection circuit includes a set of comparators to quantize an analog input signal and provide digital comparator output signals used to adjust the transmitter gain. In another exemplary design, the protection circuit reduces and increases the transmitter gain with hysteresis. In yet another exemplary design, the protection circuit has faster response to rising amplitude than falling amplitude of the output RF signal. The hysteresis and/or the different rise and fall responses may allow the protection circuit to avoid toggling the transmitter gain under severe load mismatch and to handle time-varying envelope due to amplitude modulation.

Protection circuit for power amplifier

In one embodiment, the present disclosure includes a circuit comprising a first power amplifier stage having an input to receive an input signal, an output coupled to an output node, the first power amplifier stage receiving a time-varying power supply voltage. The circuit further includes a second power amplifier stage configured in parallel with the first power amplifier stage having an input to receive the input signal, an output coupled to the output node, the second power amplifier stage receiving the time-varying power supply voltage. A first gain of the first power amplifier stage decreases when the power supply voltage is in a first low voltage range, and a second gain of the second power amplifier stage compensates for the decreasing gain of the first power amplifier stage in the first low voltage range.

Circuits and methods for reducing supply sensitivity in a power amplifier

A diversity receiver capable of receiving a CDMA system (e.g., a W-CDMA system) and a TDMA system (e.g., a GSM system), with receive diversity for at least one system, is described. W-CDMA is often referred to as UMTS. In one design, the diversity receiver includes a first receiver for GSM and a second receiver for UMTS. The first receiver may be implemented with one receiver design, may be spec-compliant for GSM, and may also support UMTS. The second receiver may be implemented with another receiver design, may be spec-compliant for UMTS, and may also support GSM. The first receiver may include a lowpass filter having a bandwidth that is adjustable for GSM and UMTS. The second receiver may include a bandpass filter used to attenuate a transmit frequency range for UMTS. Each receiver may include circuit blocks that are used for both GSM and UMTS.

Diversity receiver for wireless communication

An inductor design on a wafer level package (WLP) does not need to depopulate the solder balls on the die because the solder balls form part of the inductor. One terminal on the inductor couples to the die, the other terminal couples to a single solder ball on the die, and the remaining solder balls that mechanically contact the inductor remain electrically floating. The resulting device has better inductance, direct current (DC) resistance, board-level reliability (BLR), and quality factor (Q).

Inductor design on floating UBM balls for wafer level package (WLP)

Techniques for monitoring and controlling bias current of amplifiers are described. In an exemplary design, an apparatus may include an amplifier and a bias circuit. The amplifier may include at least one transistor coupled to an inductor. The bias circuit may generate at least one bias voltage for the at least one transistor in the amplifier to obtain a target bias current for the amplifier. The bias circuit may generate the at least one bias voltage based on a voltage across the inductor in the amplifier, or a current through a current mirror formed with one of the at least one transistor in the amplifier, or a gate-to-source voltage of one of the at least one transistor in the amplifier, or a voltage in a replica circuit replicating the amplifier, or a current applied to the amplifier with a switched mode power supply disabled.

Bias current monitor and control mechanism for amplifiers

A tunable loadline is disclosed. In an exemplary embodiment, an apparatus includes an amplifier configured to output an amplified signal having a selected power level and a first impedance network coupled to receive the amplified signal at an input terminal and generate a first output signal having a first power level at a first output terminal. The first impedance network being configured to load the amplified signal to convert the selected power level to the first power level. The apparatus also includes a second impedance network configured to selectively receive the first output signal and generate a second output signal having a second power level at a second output terminal. The second impedance network being configured to combine with the first impedance network to load the amplified signal to convert the selected power level to the second power level.

Tunable loadline

Growing community of inventors

San Diego, CA, United States of America

Aristotele Hadjichristos