Panasonic Corporation

Joled Inc.

Panasonic Liquid Crystal Display Co., Ltd.

Arinobu Kanegae

Takahiro Kawashima

Shinya Ono

Genshirou Kawachi

Yusuke Fukui

Emi Kobayashi

Genshiro Kawachi

Hiroshi Hayashi

Kiyoyuki Morita

Hidehiro Yoshida

Yuji Kishida

Kenichirou Nishida

Hitoshi Tsuge

Kenji Okumoto

Kouhei Ebisuno

Keisei Yamamuro

Shuhei Nakatani

Sadayoshi Hotta

Mika Nakamura

Kazuhiro Yokota

Mitsutaka Matsumoto

Genshirou Kawashi

The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.

Thin film transistor element substrate, method of producing the substrate, and organic EL display device including the thin film transistor element substrate

A thin-film semiconductor substrate includes a top-gate first TFT, a top-gate second TFT, and a data line (source line), in which the first TFT has a first semiconductor layer, a first gate insulating film, a first gate electrode, a first source electrode, a first drain electrode, and a first protection layer, the second TFT has a second semiconductor layer, a second gate insulating film, a second gate electrode, a second source electrode, a second drain electrode, and a second protection layer, the data line is connected to the first source electrode, the first drain electrode is an extension of the second gate electrode, and the second gate electrode is thinner than the data line.

Thin-film semiconductor substrate, light-emitting panel, and method of manufacturing the thin-film semiconductor substrate

A method of fabricating a thin-film transistor is provided. In the method, an oxide semiconductor layer is formed above a substrate. A gate insulating layer is formed above the oxide semiconductor layer. A gate electrode is formed above the gate insulating layer. A metal oxide layer is formed on the oxide semiconductor layer by reactive sputtering to reduce a resistance of the oxide semiconductor layer in a region in contact with the metal oxide layer.

Thin-film transistor, method of fabricating thin-film transistor, and display device

A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.

A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.

Thin film transistor and organic EL display device

A method of fabricating a thin-film transistor includes: forming an oxide semiconductor layer above a substrate; forming a gate insulating layer above the oxide semiconductor layer; forming a gate electrode above the gate insulating layer; forming a cover layer on the gate electrode; forming a side wall insulating layer on a side wall portion of the gate electrode by heat treatment, after the forming of a cover layer; forming an interlayer insulating layer covering the gate electrode and the oxide semiconductor layer, after the forming of a side wall insulating layer; and forming, above the interlayer insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.

Thin-film transistor including a gate electrode with a side wall insulating layer and display device

A multi-layered film includes: a plate-like flexible base member; first inorganic members that are each plate-like and arranged on the base member in separation from each other in a direction parallel to a main surface of the base member; a first organic member provided on the base member so as to be positioned between each adjacent two first inorganic members and surround each first inorganic member; a second inorganic member that covers an upper surface and lateral surfaces of the first organic member; and a second organic member that is provided on or above the first inorganic members, and is surrounded by the second inorganic member. Each lateral surface portion of the second inorganic member covering a corresponding lateral surface of the first organic member is thinner than each first inorganic member and each upper surface portion of the second inorganic member covering a corresponding portion of the upper surface.

Multi-layered film, electronic device, and manufacturing methods thereof

Pixel circuits of a display device each include: a drive transistor including one of a source and drain connected to a power source line; a capacitive element including a first terminal connected to a gate of the drive transistor; a switching element which switches conduction/non-conduction between a second terminal of the capacitive element and a data line; a switching element which switches conduction/non-conduction between the second terminal of the capacitive element and the source of the drive transistor; a switching element which switches conduction/non-conduction between the first terminal of the capacitive element and a reference voltage line; a light-emitting element including a first terminal connected to the other of the source and drain of the drive transistor and a second terminal connected to another power source line. The reference voltage line provides a forward bias voltage larger than a threshold voltage across the gate and source of the drive transistor.

Display device and method of controlling the same

A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode.

Method for fabricating thin-film semiconductor device and thin-film semiconductor device

A thin-film semiconductor device having two thin-film transistors, wherein each of the two thin-film transistors includes: a gate electrode; a gate insulating film; a semiconductor layer; a channel protection layer; an intrinsic semiconductor layer; a contact layer in contact with a portion of sides of the channel region; a source electrode on the contact layer; and a drain electrode opposite to the source electrode on the contact layer, wherein the contact layer of one of the two thin-film transistors has a conductivity type different from a conductivity type of the contact layer of the other of the two thin-film transistors.

A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed.

Thin-film transistor and method for manufacturing thin-film transistor

A thin-film semiconductor device includes a semiconductor device part and a capacitor part. The semiconductor device part includes: a light-transmitting first gate electrode; a light-shielding second gate electrode; a first insulating layer; a semiconductor layer; a second insulating layer; and a source electrode and a drain electrode. The capacitor part includes: a first capacitor electrode made of a light-transmitting conductive material; a dielectric layer; and a second capacitor electrode. The second gate electrode, the semiconductor layer, and the second insulating layer have outlines that are coincident with one another in a top view.

Thin-film semiconductor device and method for fabricating thin-film semiconductor device

A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion.

Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, EL display panel, and EL display apparatus

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Osaka, Japan

Arinobu Kanegae