International Business Machines Corporation

Globalfoundries Singapore Pte. Ltd.

Globalfoundiers Singapore Pte. Ltd.

Arifuzzaman (Arif) Sheikh

Richard Stephan Wise

Xiang Hu

Michael Vincent Aquilino

Habib Hichri

Young Way Teh

Yun Ling Tan

Helen Wang

Deleep R Nair

Hao Zhang

Jinghong H (John) Li

A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness Tthat is different from a thickness Tat the central portion of the device region.

High-K metal gate device

A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.

Integrated circuit system with reduced polysilicon residue and method of manufacture thereof

Growing community of inventors

Poughkeepsie, NY, United States of America

Arifuzzaman (Arif) Sheikh