Technion Research & Development Foundation Ltd

Ariel Ben-Sasson

Nir Tessler

An electronic device () is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure () which is enclosed between a dielectric layer () and an active element () of the electronic device (). The electrically-conductive perforated patterned structure () comprises a geometrical pattern defining an array of spaced-apart perforation regions () surrounded by continuous electrically conductive regions (). The pattern is such as to allow the active element () of the electronic device () to be in direct contact with said dielectric layer () aligned with the perforation regions (). A material composition of the device () and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure () and a desired profile of a charge carriers' injection barrier along said structure ().

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Haifa, Israel

Ariel Ben-Sasson