Japan Display Inc.

Toshiba Matsushita Display Technology Co., Ltd.

Toshiba Mobile Display Co., Ltd.

Arichika Ishida

Isao Suzumura

Hidekazu Miyake

Yohei Yamaguchi

Hiroto Miyake

Yasushi Kawata

Masayoshi Fuchi

Hajime Watakabe

Masato Hiramatsu

Yoshiro Aoki

Akihiro Hanada

Takashi Okada

Norihiro Uemura

Miyuki Ishikawa

Yuichiro Hanyu

Masahiro Watabe

Hirotaka Hayashi

Muneharu Akiyoshi

Noriyoshi Kanda

Norio Tada

Yoshiaki Nakazaki

Kisako Ninomiya

Yuki Matsuura

Masaki Kado

Toshiya Kiyota

Mikio Murata

According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Display device

According to one embodiment, a display device includes a first substrate including a first resin substrate having a first thermal expansion coefficient, and a first barrier layer having a second thermal expansion coefficient which is lower than the first thermal expansion coefficient, a second substrate including a second resin substrate having a third thermal expansion coefficient which is equal to the first thermal expansion coefficient, and a second barrier layer having a fourth thermal expansion coefficient which is lower than the third thermal expansion coefficient and is equal to the first thermal expansion coefficient, and a display element located between the first resin substrate and the second resin substrate.

A display device including TFTs in a pixel area and in a peripheral driving area in which the number of through-holes in a TFT circuit is decreased, and the mounting density of the TFTs is improved, so that a high-resolution display can be achieved. The display device includes a display area in which pixels are disposed in a matrix form, and a TFT substrate, on which a peripheral driving circuit is disposed, on the outer side of the display area. The pixels or the peripheral driving circuit includes TFTs (thin film transistors) each of which is formed in such a way that a first gate electrode of each TFT is formed relative to a semiconductor layer with a first gate insulating film therebetween, and a drain electrode and a source electrode of each TFT that are connected to the semiconductor layer are formed at layers different from each other.

According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.

Method of manufacturing display device having a multilayered undercoating layer of silicon oxide and silicon nitride

A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

Semiconductor device

According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

According to one embodiment, provided is a liquid crystal display device with a reduced size and little restriction for incorporation into other devices. The liquid crystal display device includes an array substrate that includes multiple thin film transistors for pixel driving, a scanning line and a signal line. The liquid crystal display device also includes a counter substrate disposed on the display side in a manner opposed to the array substrate. The liquid crystal display device further includes an FPC arranged to transmit an external signal for driving of the thin film transistors. One end portion of the FPC is connected to the scanning line and the signal line, while the other end portion is extended inward. The scanning line, the signal line and the FPC are disposed within an outline of the counter substrate.

According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

Growing community of inventors

Tokyo, Japan

Arichika Ishida