Sri International

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Savin Corporation

Arden Sher

John B Mooney

Marc J Madou

Takaaki Otagawa

Karen Sabo

Christopher J Spindt

Robert A Frosch

William E Miller

Yuan H Tsuo

Mark Von Schilfgaarde

An-Ban Chen

A semiconductor layer of In.sub.1-x Tl.sub.x Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As.sub.1-y P.sub.y and 0&lt;x&lt;1, 0&lt;y&lt;1.

Compounds and infrared devices including In.sub.1-x Tl.sub.x Q, where Q

A process is disclosed for forming shaped superconductors of the metal oxide type by electrophoretic deposition of superconducting particles which comprises providing particulate superconducting material of the metal oxide type coated with a fusible binder, electrophoretically depositing such coated superconducting particles on a substrate, heating the coated substrate sufficiently to fuse the binder to the substrate, fabricating the coated substrate into a desired shape, removing the binder, and then sintering the coated substrate to sinter the superconducting particles together. In a preferred embodiment the process further comprises immersing the coated substrate in an electrostatic field during the fusion step to both orient and maintain the superconducting particles in a desired direction.

Method of forming shaped superconductor materials by electrophoretic

The present invention relates to solid materials for use as electrolyte for a fuel cell, or for a sensor, or as a catalyst. Representative structures include lanthanum fluoride, lead potassium fluoride, lead bismuth fluoride, lanthanum strontium fluoride, lanthan strontium lithium fluoride, calcium uranium, cesium fluoride, PbSnFy, KSn.sub.2 F.sub.4, SrCl.sub.2.KCl, LaOF.sub.2, PbSnF.sub.8.PbSnO, lanthanum oxyfluoride, oxide, calcium fluoride, SmNdFO, and the like. In another aspect, the present invention relates to a composite and a process to obtain it of the formula:

Solid compositions for fuel cells, sensors and catalysts

A low dislocation density semiconductor device includes a first semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The semiconductor compound usually has a large dislocation density. A predetermined position of the alloying atoms in the compound lattice structure can substantially reduce the compound dislocation density. Energy is applied to the alloying atoms so they are at the predetermined positions. The number of alloying atoms causes the semiconductor compound solubility limit to be exceeded. The layer is formed on a substrate of the III-V or II-VI semiconductor, such as gallium arsenide or another semiconductor, such as silicon or on an insulator such as sapphire. In the latter cases, the layer is formed on an intermediate layer having a lattice constant between that of the substrate and semiconductor compound. A second layer is epitaxially deposited on the first layer so both layers have virtually the same lattice constant and dislocation density. The alloying atoms are deposited by different energy assist methods, e.g. by an ion beam that irradiates the substrate, or by an energy assisted organometallic chemical vapor deposition process. The energy assist can be by ionization or optical irradiation causing topical heating of surface atoms deposited by the OMCVD process, without heating of the substrate or the underlying atoms. If the ion beam process is employed, the substrate is annealed such that the alloying atoms move from initial random locations thereof in the compound lattice to the predetermined locations.

Low dislocation density semiconductor device

Method of forming a low dislocation density semiconductor device

A thermal detector and method of making the same in which a suspension of binder-encapsulated copper particles is produced by comminuting a chip formed by dry-milling a major amount of copper particles with a minor amount of a binder and a charge director to produce the chip of copper particles in an encapsulant having functional sites. The bits of comminuted material are wet-milled with a major amount of a low-boiling aliphatic hydrocarbon to produce a suspension from which encapsulated copper particles are deposited on a substrate by electrophoresis. The deposit is electron-beam cured to form the detector.

Thermal detector

The present invention relates to solid materials for use as solid electrolytes for a fuel cell. Specifically, the invention relates to a solid O.sup.2- conducting material for use as an electrolyte for a fuel cell, comprising:

Solid compositions for fuel cell electrolytes

Method of making a low dislocation density semiconductor device

Gas species are detected with a capacitor having a solid, ionic dielectric excited by an AC voltage in the ramp from 0.01-30 Hz, with an amplitude of 1-100 millivolts to allow physisorption processes and/or with an AC voltage in the same frequency range and amplitudes from 0.01-3 volts to achieve chemisorption reactions. The AC impedance of the capacitor is detected for both physisorption and chemisorption excitation to determine gas species and concentration. In chemisorption, diode like action occurs, and is detected by AC harmonic detection processes. The surface of the dielectric on which the gas is incident is overlaid with a grid or porous electrode, fabricated of inert metal or a catalyst which causes the capacitor to enable preferential adsorption by the dielectric of certain materials, to indicate the presence of certain gases. Plural capacitors, having different absorption characteristics in response to different gases facilitates detection of plural gases. The dielectric is a rare earth fluoride, preferably lanthanum fluoride. The AC impedance of the capacitor provides the specie and concentration indications.

Capacitive gas detector having a solid rare earth fluoride dielectric

Gas species are detected with a capacitor having a solid, ionic dielectric excited by an AC voltage in the range from 0.01-30 Hz, with an amplitude of 1-100 millivolts to allow physisorption processes and/or with an AC voltage in the same frequency range and amplitudes from 0.01-3 volts to achieve chemisorption reactions. The AC impedancae of the capacitor is detected for both physisorption and chemisorption excitation to determine gas species and concentration. In chemisorption, diode like action occurs, and is detected by AC harmonic detection processes. The surface of the dielectric on which the gas is incident is overlaid with a grid or porous electrode, fabricated of inert metal or a catalyst which causes the capacitor to enable preferential adsorption by the dielectric of certain materials, to indicate the presence of certain gases. Plural capacitors, having different adsorption characteristics in response to different gases facilitates detection of plural gases. The dielectric is a rare earth fluoride, preferably lanthanum fluoride. The AC impedance of the capacitor provides the specie and concentration indications.

Gas detection method and apparatus using chemisorption and/or

A magnetic recording medium having a coating of magnetic particles deposited thereon by electrophoresis. Magnetic particles are encapsulated by dry milling in a thermoplastic binder which is insoluble at ambient or room temperatures and is softenable at temperatures higher than 70.degree. C. A charge director for producing functional sites in the higher is incorporated in the encapsulating polymer during the dry-milling step. The encapsulated mass is comminuted or pulverized and then wet-milled with a major amount of a low-boiling aliphatic hydrocarbon liquid. A suspension is then formed with additional hydrocarbon liquid. Additional charge director may be added, either during the wet-milling step or during the suspension-forming step. The suspension is then used as a bath from which the coating is deposited by electrophoresis. The magnetic particles are oriented by the application of a magnetic field, either during the depositing step or subsequent thereto. If subsequent, the binder is heated to soften the same. The final coating is then cured by any appropriate means, such as an electron beam.

Electrophoretic method of producing high-density magnetic recording

An integrated circuit bulk substrate having a zinc blende or Wurtzite crystalline structure is alloyed with a material having atoms that replace atoms of the host semiconductor. The alloyed atoms have a bond length with the nearest neighboring host atoms that is less than the bond length of the host atoms. The number of bonded alloyed atoms is small compared to the number of host atoms so as not to substantially affect electronic conduction properties of the host material, but is large enough to virtually eliminate dislocations over a large surface area and volume of the host material on which active semiconductor devices are located.

Integrated circuit having dislocation free substrate

A photocapacitive image detector array comprises a matrix of M.times.N spaced columns of relatively high carrier concentration extending between first and second opposite faces of a semiconductor substrate having a relatively low carrier concentration. N parallel spaced electrode stripes extend in the X direction on the first face and M parallel spaced semiconductor stripes of intermediate carrier concentration extend in the Y direction on the second face. Stripe k of the N stripes makes ohmic contacts with each of the M columns, where k=1,2, . . . N. Stripe p of the M semiconductor stripes makes contact with each of the N columns, where p=1, 2, . . . M. Each of the M regions has a depletion layer having a thickness adapted to be modulated by radiation from an image to be detected. M parallel spaced electrode stripes extend in the Y direction so that stripe q of electrode stripes M is in registration with semiconductor stripe q, where q=1, 2, . . . M. A composite insulating layer, including two insulating thin films, is sandwiched between the M electrode stripes and M semiconductor stripes. Thereby M.times.N pixels are formed, with each pixel being associated with a different one of the columns. The composite insulating layer and M electrodes are transparent to radiation from the image so that the image incident on the semiconductor stripes modulates the thickness of the depletion layers of the semiconductor stripes to vary the capacitance at each pixel as a function of the radiation intensity incident thereon.

Photocapacitive detector array

A magnetic recording medium having a coating of magnetic particles deposited thereon by electrophoresis. Magnetic particles are encapsulated by dry milling in a thermoplastic binder which is insoluble at ambient or room temperatures and is softenable at temperatures higher than 70.degree. C. A charge director for producing functional sites in the binder is incorporated in the encapsulating polymer during the dry-milling step. The encapsulated mass is comminuted or pulverized and then wet-milled with a major amount of a low-boiling aliphatic hydrocarbon liquid. A suspension is then formed with additional hydrocarbon liquid. Additional charge director may be added, either during the wet-milling step or during the suspension-forming step. The suspension is then used as a bath from which the coating is deposited by electrophoresis. The magnetic particles are oriented by the application of a magnetic field, either during the depositing step or subsequent thereto. If subsequent, the binder is heated to soften the same. The final coating is then cured by any appropriate means, such as an electron beam.

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San Carlos, CA, United States of America

Arden Sher