International Business Machines Corporation

Archibald John Allen

Jed Hickory Rankin

Jerome Brett Lasky

Francis Roger White

Randy William Mann

John Joseph Pekarik

Mark Alan Lavin

Gustavo Enrique Tellez

David V Horak

Toshiharu Furukawa

Mark Charles Hakey

John Maxwell Cohn

Dennis Merton Newns

Edward W Conrad

William C Leipold

Daniel Nelson Maynard

Orest Bula

Evanthia Papadopoulou

Daniel C Cole

Wilm Ernst Donath

Edward W Sengle

Edward F O'Neil

Alan Dziedzic

Roger Andrew Verhelst

A method of computing a manufacturing yield of an integrated circuit having device shapes includes sub-dividing the integrated circuit into failure mechanism subdivisions (each of the failure mechanism subdivisions includes one or more failure mechanism and each of the failure mechanisms includes one or more defect mechanisms), partitioning the failure mechanism subdivisions by area into partitions, pre-processing the device shapes in each partition, computing an initial average number of faults for each of the failure mechanisms and for each partition by numerical integration of an average probability of failure of each failure mechanism, (the numerical integration produces a list of defect sizes for each defect mechanism, and the computing of the initial average includes setting a maximum integration error limit, a maximum sample size for a population of each defect size, and a maximum number of allowable faults for each failure mechansim), and computing a final average number of faults for the integrated circuit by iterativelly reducing a statistical error of the initial average number of faults for each of the failure mechanisms until the statistical error is below an error limit.

Method for prediction random defect yields of integrated circuits with accuracy and computation time controls

A structure for a semiconductor chip which includes a first region having first cells for storing and processing data, and a second region outside the first region having OPC structures, wherein the OPC structures comprise decoupling capacitors. The line widths of the active gates of first cells are the same size or similar in size as the OPC structures. The OPC structures reduce proximity effects of active devices in the first cells, and comprise N-type FETs and P-type FETs, that are located in the second region. The OPC structures may have a width greater than the first cells. The second region can be multiple OPC structures, whereby the second region comprises multiple decoupling capacitors. The active devices in the first cells are separated by a first distance and the OPC structures are separated from the active devices by the first distance.

Optical Proximity Correction Structures Having Decoupling Capacitors

A buried butted contact and method for its fabrication are provided which includes a substrate having dopants of a first conductivity type and having shallow trench isolation. Dopants of a second conductivity type are located in the bottom of an opening in said substrate. Ohmic contact is provided between the dopants in the substrate and the low diffusivity dopants that is located on a side wall of the opening. The contact is a metal silicide, metal and/or metal alloy.

Buried butted contact and method for fabricating

An efficient computer implemented method computes critical area for via blocks in Very Large Scale Integrated (VLSI) circuits. The method is incremental and takes advantage of the hierarchy in the design. In order to increase the efficiency further we use the L,or the L,metric instead of the Euclidean geometry.

Incremental method for critical area and critical region computation of via blocks

A FET device comprising a semiconductor substrate; diffusion regions in the substrate separated by a channel region; a gate overlapping the channel region and a portion of the diffusion regions and separated from the substrate by a gate dielectric; and a sidewall dielectric on a sidewall of the gate; and a sidewall spacer conductor on the sidewall dielectric contacting one of the diffusion regions but not both of the diffusion regions of one device is provided along with a method for its fabrication. The conductive spacer connects diffusions of adjacent devices that share a common gate electrode.

FET device containing a conducting sidewall spacer for local

The present invention overcomes the difficulties found in the background art by providing a direct low resistive contact between devices on a semiconductor chip without excessive current leakage. Current leakage is prevented in the preferred design by using silicon on insulator (SOI) construction for the chip. By constructing the direct contact over an insulator, such as silicon dioxide, current leakage is minimized. The preferred embodiment uses silicide to connect a polysilicon gate to a doped region of the substrate. An alternative embodiment of the present invention provides for the use of conductive studs to electrically connect devices. An increased density of approximately twenty percent may be realized using the present invention.

Device contact structure and method for fabricating same

A method and apparatus for conditioning an integrated circuit to always enter a desired operating state when actuated by permanently altering at least one component device. An integrated circuit is provided with at least one component transistor wherein a constant high voltage is applied only once to the drain electrode of the transistor for one predetermined period of time while concurrently a constant voltage lower than the high voltage is applied only once to the gate electrode of the transistor, thus causing a permanent channel hot-electron alteration of a gate oxide of the transistor. The integrated circuit may include a plurality of programmable circuits, each capable of assuming a plurality of readable data states when powered up, and each including a plurality of programmable devices for permanently biasing its corresponding programmable circuit to assume one of the readable states upon subsequent power ups.

Hot-electron programmable latch for integrated circuit fuse applications

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Shelburne, VT, United States of America

Archibald John Allen