Applied Materials, Inc.

Aravind Kamath

Cheng-Hsiung Matt Tsai

Jallepally Ravi

Manjunatha P Koppa

Tomoharu Matsushita

Steven Victor Sansoni

David T Or

Cheng-Hsiung Matthew Tsai

Manjunath H Venkataswamappa

Hiroyuki Takahama

Xianmin Tang

Rongjun Wang

Adolph Miller Allen

Xiaoxiong Yuan

Yu Wen Chang

Xiangjin Xie

Feng Chen

Tae Hong Ha

Lu Chen

Wei Lei

Alexander Jansen

Anthony Chih-Tung Chan

Wenjing Xu

Mukund Sundararajan

Bonnie T Chia

Carmen Leal Cervantes

Vinod Konda Purathe

Shiyu Yue

Borui Xia

Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

Substrate position calibration for substrate supports in substrate processing systems

Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.

Top magnets for decreased non-uniformity in PVD

Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

Methods and apparatus for precleaning and treating wafer surfaces

Process shield for a substrate processing chamber

Deposition ring for a substrate processing chamber

Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.

Lift pin assembly

Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a body having a support surface; an RF electrode disposed in the body proximate the support surface to receive RF current from an RF source; a shaft to support the body; a conductive element having an interior volume and extending through the shaft, wherein the conductive element is coupled to the RF electrode; and an RF gasket; wherein the conductive element includes features that engage the RF gasket to return the RF current to ground.

Substrate support with improved RF return

Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a body having a support surface; and a first heater disposed within the body and having a first heating coil and multiple heating zones, wherein a pitch of windings of the first heating coil vary among each of the multiple heating zones to define a predetermined heating ratio between the multiple heating zones.

Substrate support with multiple heating zones

Growing community of inventors

Santa Clara, CA, United States of America

Aravind Kamath