Sony Semiconductor Solutions Corporation

Sony Corporation

Arata Kobayashi

Hiroki Naito

Daisuke Saito

Sayaka Aoki

Takahiro Koyama

Gen Sakoda

Hiroyuki Okuyama

Takayuki Kawasumi

Kensuke Kojima

Makoto Oogane

A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Light-emitting element wafer, light emitting element, electronic apparatus, and method of producing light-emitting element wafer

A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Light-emitting element wafer, light emitting element, electronic apparatus

A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Light-emitting element having an optical function film including a reflection layer

A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Semiconductor light emitting device, method of manufacturing the same, image display device, and electronic apparatus

An alternating current driven type plasma display device which does not increase a driving voltage (discharge voltage) and does not increase a time delay of discharge is provided. The alternating current driven type plasma display device contains a first panel having a plurality of first electrodes formed on a first substrate and a dielectric layer formed on the first substrate and the first electrodes and a second panel, in which the first panel and the second panel are bonded to each other in circumferential portions thereof, the dielectric layer is constituted by SiO, and bonding density of HO contained in SiOis 3.0&#xd7;10Bonds/cmor more.

Alternating current driven type plasma display device and production method therefor

The present invention provides a plasma display device having an even and homogeneous dielectric layer and permitting a small luminance change over time. The plasma display device includes a first substrate, a second substrate disposed facing an inside of the first substrate so as to form a hermetically sealed discharge space therebetween, at least one pair of discharge sustain electrodes which are formed inside the first substrateand forming a discharge gap therebetween, and the dielectric layer formed inside the first substrate so as to cover the discharge sustain electrodes. The dielectric layer has a low degassing film such that a total amount of degassing when increasing a temperature from room temperature to 1000&#xb0; C. has hydrogen molecules not exceeding 1&#xd7;10particles/cmand water not exceeding 5&#xd7;10particles/cm.

Growing community of inventors

Kanagawa, Japan

Arata Kobayashi