Fujitsu Corporation

Arata Jogo

Yutaka Shimizu

Hirotaka Oshima

Atsushi Tanaka

Takuya Uzumaki

Toshihiro Azami

Reiko Kondo

Keiichi Nagasaka

Takahiro Ibusuki

Makoto Uchishima

Makoto Saotome

Susumu Kashiwagi

A mobile device includes: a location detecting unit configured to detect a location of the mobile device; an operation instructing unit configured to instruct a user to perform a specific operation when the location detecting unit detects a specific location; an operation detecting unit configured to detect the specific operation of the user; a determining unit configured to determine whether the specific operation has been performed at the specific location; and a status changing unit configured to change a status of the mobile device when the determining unit determines that the specific operation has been performed at the specific location.

Mobile device, and method and computer readable storage medium therefor

An input device includes an acquisition unit to acquire touch region information including position coordinates of a plurality of sensors in a touch screen and a sensed value of each sensor, a first calculation unit to calculate a shape of a touch region based on the touch region information, and a second calculation unit to calculate a detected touch position detected as a touch position based on the shape.

Input device and method for touch position calculation

A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

Magneto-resistive element, magnetic head and magnetic storage apparatus

A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.

Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof

A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (), Point B (), Point C (), Point D (), Point E (), Point F (), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.

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Kawasaki, Japan

Arata Jogo