Hrl Laboratories, LLC

Gm Global Technolgoy Operations, Inc.

The Boeing Company

Ara K Kurdoghlian

Miroslav Micovic

Jongchan Kang

Alexandros Margomenos

Hasan Sharifi

Igal Bilik

Tahir Hussain

Paul B Hashimoto

Mehran Mokhtari

Gary Peng

Emilio A Sovero

Robert G Nagele

Daniel Kuzmenko

Jeong-sun Moon

Keisuke Shinohara

David F Brown

James Lazar

Harris P Moyer

Grant Andrew Ellis

Colleen M Butler

Jongchang Kang

Ross L Bowen

A unit cell for a resistive mixer includes a plurality of active devices arranged in series, wherein each of said plurality of active devices having a different output conductance. A resistive mixer includes a plurality of active devices connected in series with one another to form a unit cell.

Mixer with series connected active devices

The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.

Field effect transistor (FET) configured to phase shift a radar signal using first and second variable voltages applied to a gate and a back gate of the FET

A radar system includes a transmit section to emit a transmit signal. A chip-based front-end portion of the transmit section increases a frequency of an input signal to produce an intermediate signal and amplifies signal strength of the intermediate signal to produce the transmit signal. The frequency of the input signal is in a range of 76 gigahertz (GHz) to 80 GHz. The radar system also includes a receive section to receive a reflected signal resulting from reflection of the transmit signal by an object.

Chip-based transmit channel architecture

A receiver apparatus is provided. The apparatus includes a single field effect transistor mixer comprising a gate, a source and a drain, wherein one of the source or the drain is configured to receive a first signal from a first low noise amplifier at a receiving frequency and another of the source or the drain is configured to output a second signal at an intermediate frequency to a second low noise amplifier; and a local oscillator configured to apply a third signal to the gate.

Receiver apparatus

A circuit for driving a switched transistor comprises: a level shifter comprising at least one transistor, the level shifter configured to convert an input pulse to a pulse having a greater voltage swing than the input pulse and shift a voltage level of the converted pulse; and a pulse shaping filter coupled between the level shifter and the gate of the switched transistor, the pulse shaping filter tuned to cancel or reduce an impedance of the gate of the switched transistor. The switched transistor and/or the at least one transistor are a GaN High Electron Mobility Transistor (HEMT).

Circuit for driving switched transistor and filter, circulator and correlator including the same

Systems, methods, and apparatus are disclosed for wideband power amplification in a platform, such as an airplane. An amplifier module may include a first amplification stage. The first amplification stage may comprise a first plurality of amplification circuits. The amplifier module may also include a first plurality of couplers configured to couple an input port to each amplification circuit of the first amplification stage. The amplifier module may include a second amplification stage comprising a second plurality of amplification circuits. The amplifier module may also include a second plurality of couplers configured to couple the first amplification stage to the second amplification stage. The amplifier module may include a third plurality of couplers configured to combine an output of each amplification circuit of the second plurality of amplification circuits into an output signal. The third plurality of couplers may comprise one or more Lange couplers.

Systems, methods, and apparatus for a power amplifier module

A cancellation circuit for a simultaneous transmit and receive system includes a variable attenuator, a variable coarse true time delay a variable fine true time delay, the variable fine true time delay having a cancellation signal output, a circulator coupled to a transmit signal and having a receive signal input and having an output having a sum of the receive signal and a leakage signal, the leakage signal being a portion of the transmit signal leaking through the circulator, a 180&#xb0; hybrid having a delta output having a difference between the sum of the receive signal and a leakage signal and the cancellation signal, and a control circuit coupled to the delta output and the variable attenuator, the variable coarse true time delay, and the variable fine true time delay to adjust an amplitude and phase of the cancellation signal.

GaN based active cancellation circuit for high power simultaneous transmit and receive systems

An operational amplifier includes three transconductance stages (TSs) each having a differential input and a differential output, a first and second resistor coupled between the differential output of the first TS and the differential input of the first TS, a third and fourth resistor coupled between the differential output of the third TS and the differential input of the first TS, a first and second capacitor coupled between the differential output of the third TS and the differential input of the third TS, wherein the first, second, and third TSs each include a differential input amplifier coupled to the differential input of the respective TS, a differential output amplifier coupled to the differential output of the respective TS, and a plurality of Schottky diodes coupled between the differential input amplifier and the differential output amplifier for voltage level shifting.

High performance GaN operational amplifier with wide bandwidth and high dynamic range

A mixer including a field effect transistor having a source, a drain and a gate, an input port coupled to the source or to the drain of the field effect transistor, an output port coupled to the drain of the field effect transistor if the input port is coupled to the source, or coupled to the source of the field effect transistor if the input port is coupled to the drain, a local oscillator for mixing a first frequency on the input port to a second frequency on the output port, a first micro-strip line coupling the local oscillator to the gate, and a shunt resistor capacitor termination coupled to the gate. The shunt resistor capacitor termination includes a resistor in series with a capacitor.

Shunt resistor and capacitor termination for broadband resistive mixer

A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.

Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated device

A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.

Ohmic metal contact protection using an encapsulation layer

Ohmic metal contact and channel protection in GaN devices using an encapsulation layer

A compact amplifier output bias circuit is used as a broadband harmonic termination. The bias circuit is adapted as a harmonic termination circuit to produce an effective low impedance or act as a load at the signal harmonic frequencies while having the capability of supplying DC power to the amplifier stage, optionally, if needed. A pi network is coupled to an active device output and provides a low impedance at frequency bands above a frequency band of operation while allowing DC bias to be appliable to the active device output.

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La Canada, CA, United States of America

Ara K Kurdoghlian