Nitronex Corporation

International Rectifier Corporation

Apurva D Chaudhari

Robert Joseph Therrien

Kevin J Linthicum

Edwin Lanier Piner

Allen W Hanson

John Claassen Roberts

Jerry Wayne Johnson

Pradeep Rajagopal

Walter H Nagy

Sameer Singhal

James W Cook, Jr

Ricardo M Borges

Andrei Vescan

Jeffrey D Brown

Isik C Kizilyalli

David M Boulin

The invention provides semiconductor material (e.g., gallium nitride material) devices (e.g., transistors) and methods associated with the same. The devices may be supported within a package that is formed, in part, of a polymeric material. In other embodiments, the devices may be mounted to a support (e.g., circuit board) and a polymeric material may encapsulate a portion of the device extending from the support.

Packaged gallium nitride material transistors and methods associated with the same

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Gallium nitride material transistors and methods associated with the same

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Raleigh, NC, United States of America

Apurva D Chaudhari