Melexis Technologies Nv

Melexis Technologies Sa

Melexis Nv

X-Fab Semiconductor Foundries Ag

Appolonius Jacobus Van Der Wiel

Carl Van Buggenhout

Ben Maes

Laurent Otte

Jian Chen

Johan Vergauwen

Maliheh Ramezani

Pieter Rombouts

Johan Raman

Jan-Willem Burssens

Samuel Huber

Luc Buydens

Rudi De Winter

Tim Vangerven

Uwe Schwarz

Cathleen Rooman

A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying () the elongate sensor element is disposed within the packaging mould (). The moulding compound is then introduced () into the packaging mould during a predetermined period of time () so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.

Method of manufacturing a sensor device and moulding support structure

A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.

Housing via for semiconductor current sensor

A controller configured for detecting a disturbance using a comparison of outputs of at least two sensors and for determining a pressure from the outputs of the at least two sensors. A ratio of the measurement sensitivity and the disturbance sensitivity should be different for the at least two sensors. A method for monitoring disturbances of a sensor assembly includes comparing the outputs of the at least two sensors. The controller and related method provide, while requiring only two sensors, a redundant system that is also able to detect excessive disturbances on a sensor assembly.

Dual pressure sensor with improved disturbance detection

A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

Semiconductor device with embedded magnetic flux concentrator

A method of manufacturing a sensor device () comprises providing () a package () having a first die-receiving subframe volume () separated from a second die-receiving subframe volume () by a partition wall (). An elongate sensor element () is disposed () within the package () so as to bridge the first and second subframe volumes () and to overlie the partition wall (). The elongate sensor element () resides substantially in the first subframe volume () and partially in the second subframe volume (). The elongate sensor element () is electrically connected within the second subframe volume ().

Sensor device and method of manufacture

A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Semiconductor stress sensor

A semiconductor device comprises a first doped semiconductor layer, a second doped semiconductor layer, an oxide layer covering the first doped semiconductor layer and the second doped semiconductor layer, and an interconnect. The first doped semiconductor layer is electrically connected with the second doped semiconductor layer by means of the interconnect which crosses over a sidewall of the second doped semiconductor layer. The interconnect comprises a metal filled slit in the oxide layer. At least one electronic component is formed in the first and/or second semiconductor layer. The semiconductor device moreover comprises a passivation layer which covers the first and second doped semiconductor layers and the oxide layer.

CMOS based devices for harsh media

A pressure sensor device comprises a device package () arranged to define a cavity () having an opening for fluid communication with an internal volume thereof. The cavity () comprises a side wall (). An elongate pressure sensor element () is provided and has a proximal end () and a distal end (). The side wall () is arranged to hold fixedly the proximal end () of the pressure sensor element () therein so that the pressure sensor element () is cantilever-suspended from the side wall () within the cavity ().

Pressure sensor device and method of sensing pressure

A semiconductor device comprising a first and second doped semiconductor layer wherein the first layer is a monosilicon layer and the second layer is a polysilicon layer, an oxide layer covering the first and second layer, and an interconnect which electrically connects the first and second layer comprises a metal alloy which has a first part in contact with the first layer and a second part in contact with the second layer, wherein a part of the metal alloy between the first and the second part crosses over a sidewall of the second layer; at least one electronic component is formed in the first and/or second layer; the semiconductor device moreover comprises a stoichiometric passivation layer which covers the first and second layer and the oxide layer.

Semiconductor device for use in harsh media

A semiconductor device includes an electronic circuit, an interconnection contact such as a solder ball, and a plate configured to concentrate magnetic flux to a predetermined area. The plate is electrically conductive, and it is electrically connected to the electronic circuit.

Integrated magnetic concentrator and connection

A sensor device for use in harsh media, comprising a silicon die comprises a lowly doped region, and a contact layer, contacting the silicon die. The contact layer comprises a refractory metal and an ohmic contact to the silicon die via a silicide of the refractory metal. A noble metal layer is provided over the contact layer such that the contact layer is completely covered by the noble metal layer. The noble metal layer comprises palladium, platinum or a metal alloy of palladium and/or platinum. The noble metal layer is patterned to form an interconnect structure and a contact connecting via the contact layer to the ohmic contact. The noble metal layer is adapted for providing a shield to prevent modulation of the lowly doped region by surface charges. The noble metal layer may advantageously protect the contact layer against harsh media in an external environment of the sensor device.

Sensor shielding for harsh media applications

A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, including: a membrane; a first resistor connected between a first bias node and a first output node; a second resistor connected between the first bias node and a second output node; a first and second current source connected to the first resp. second output node for generating a differential voltage signal indicative of the external pressure to be measured. The resistors including piezo-resistive strips arranged in particular crystallographic directions. The circuit may have a third and four resistor pair for compensating package stress. The Piezo-resistive strips may be formed as p-doped regions within an n-well, the biasing node being electrically connected to the n-well.

Semiconductor pressure sensor

A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

Semiconductor pressure sensor for harsh media application

A method for making and a semiconductor device comprises a silicon die including a metal contact region and, at least one passivation layer covering the semiconductor die and patterned such as to form an opening to the metal contact region of the semiconductor die. A continuous part of a contact layer comprises a refractory metal, and overlaps and completely covers the opening in the at least one passivation layer to contact the metal contact region in the opening and adhere to the at least one passivation layer along the entire edge of the continuous part. The contact layer comprises at least an adhesion layer and at least a diffusion barrier layer. A noble metal layer is arranged over the contact layer and completely covers the continuous part to adhere to the at least one passivation layer around the edge of the continuous part.

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Duisburg, Belgium

Appolonius Jacobus Van Der Wiel