Guangdong University of Technology

Aoke Song

Yun Chen

Xin Chen

Maoxiang Hou

Zijian Li

Shengbao Lai

Biao Li

Shankun Dong

Pengfei Yu

A method of fabricating a film vibration device, including: photoetching a surface of a silicon wafer to form a circular-hole array; etching an aluminum layer on the silicon wafer; etching the silicon wafer to form a through-hole array to obtain a porous silicon wafer; attaching a polyethylene terephthalate (PET) sheet to a side of the porous silicon wafer; ablating the PET sheet to obtain a porous PET film; attaching a polyvinylidene fluoride (PVDF) film to a lower side of the porous silicon wafer; performing vacuumization above the porous silicon wafer, while heating the PVDF film below the porous silicon wafer to create dome micro-structures on the PVDF film; and laminating the porous PET film on each of two sides of the PVDF film to obtain the film vibration device. This application also provides a cleaning device having the film vibration device.

Film vibration device and fabrication method thereof, and cleaning device including the same

A method for manufacturing a core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator is provided. A mask covering a center part of a gallium nitride wafer is removed. An electrodeless photoelectrochemical etching is performed on the gallium nitride wafer to form a primary GaN nanowire array on a surface of the gallium nitride wafer. A precious metal layer provided on the surface of the gallium nitride wafer is removed and an alumina layer is deposited on the surface of the gallium nitride wafer to cover the primary GaN nanowire array to obtain a core-shell coaxial GaN nanowire array. A first conductive layer is provided on a flexible substrate to which the core-shell coaxial GaN nanowire array is transferred. A second conductive layer is provided at a top end of the core-shell coaxial GaN nanowire array, and is connected to an external circuit to obtain the core-shell coaxial GaN piezoelectric nanogenerator.

Method for manufacturing core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator

Growing community of inventors

Guangzhou, China

Aoke Song