Applied Materials, Inc.

Anzhong Chang

Paul Brillhart

Kin Pong Lo

Edric Tong

Zhiyuan Ye

Kartik Bhupendra Shah

James Francis Mack

Joseph Michael Ranish

David H Quach

David K Carlson

Schubert S Chu

Nyi O Myo

Mehmet Tugrul Samir

Satheesh Kuppurao

Zhepeng Cong

Anh Ngoc Nguyen

Zuoming Zhu

Kevin Joseph Bautista

Alexander Tam

Sumedh Acharya

Anhthu Ngo

Tetsuya Ishikawa

Son Truong Nguyen

Yi-Chiau Huang

Xuebin Li

Balasubramanian Ramachandran

Yuriy Melnik

Olga Kryliouk

Lily L Pang

Harsukhdeep S Ratia

Hua Chung

Aaron Muir Hunter

Errol Antonio C Sanchez

Ming Xi

Shu-Kwan Danny Lau

Xiaoxiong Yuan

Siqing Lu

Richard Omar Collins

Surajit Kumar

Steve Aboagye

Michael Xiaoxuan Yang

David P Bour

Hiroji Hanawa

Wei-Yung Hsu

Donald J K Olgado

Sang Won Kang

Kyawwin Jason Maung

Xizi Dong

Ling Chen

Karl Anthony Littau

Vincent W Ku

Bo Zheng

Chien-Teh Kao

Salvador P Umotoy

Christophe Marcadal

Lawrence Chung-Lai Lei

Yu Wen Chang

Sandeep Nijhawan

Brian Hayes Burrows

Oleg V Serebryanov

You Wang

Kailash Kiran Patalay

Ken Kaung Lai

Dongming Iu

Karthik Ramanathan

John Vincent Schmitt

Nitin Pathak

Jie Su

Son Trinh

John O Dukovic

Shih-Hung Li

Manish Hemkar

Ping Jian

Herman Diniz

Sal Umotoy

Anand Vasudev

Bevan Vo

Ron L Rose

Vinh Dang

Hongbee Teoh

Dongxi Sun

In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Thermal processing susceptor

A processing chamber is described. The processing chamber includes a chamber having an interior volume, a light pipe window structure coupled to the chamber, the light pipe window structure having a first transparent plate disposed within the interior volume of the chamber, and a radiant heat source coupled to a second transparent plate of the light pipe window structure in a position outside of the interior volume of the chamber, wherein the light pipe window structure includes a plurality of light pipe structures disposed between the first transparent plate and the second transparent plate.

Light pipe window structure for thermal chamber applications and processes

Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

Light pipe window structure for low pressure thermal processes

Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

Upper dome with injection assembly

Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Susceptor design to reduce edge thermal peak

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.

Showerhead assembly with gas injection distribution devices

Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

EPI base ring

Embodiments of the present disclosure relate to a dome assembly. The dome assembly includes an upper dome including a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8&#xb0; to about 16&#xb0; with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8&#xb0; to about 16&#xb0; with respect to a planar bottom surface of the lower peripheral flange.

Quartz upper and lower domes

Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas

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San Jose, CA, United States of America

Anzhong Chang