Brookhaven Science Associates, Lcc

Norfolk State University

Anwar Hossain

Ralph B James

Giuseppe Camarda

Ge Yang

Aleksey E Bolotnikov

Yonggang Cui

Ki Hyun Kim

Kihyun Kim

Gianluigi De Geronimo

Emerson Vernon

Utpal N Roy

Rajeh Mundle

Aswini Pradhan

Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.

Radiation detector

Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.

Production and distribution of dilute species in semiconducting materials

A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.

Radiation detector device for rejecting and excluding incomplete charge collection events

A radiation detector system that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration with a common cathode.

Array of virtual Frisch-grid detectors with common cathode and reduced length of shielding electrodes

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Hybrid anode for semiconductor radiation detectors

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Port Jefferson Station, NY, United States of America

Anwar Hossain