Meta Platforms Technologies, LLC

Facebook Technologies, LLC

Anurag Tyagi

Maik Andre Scheller

Andrew John Ouderkirk

James Ronald Bonar

Christopher Yuan Ting Liao

Gareth John Valentine

Jonathan Robert Peterson

John Goward

Fenglin Peng

Sheng Ye

Stephan Lutgen

Tanya Malhotra

Oleg Yaroshchuk

Tingling Rao

Arman Boromand

Zhimin Shi

Lafe Joseph Purvis, Ii

Markus Broell

Yuge Huang

Michael Grundmann

Sandeep Rekhi

David Hwang

Ehsan Vadiee

Brian Matthew Mcskimming

Lafe Joseph Purvis Ii

An optical film includes an organic solid crystal film formed of a contiguous organic solid crystal having a first dimension no less than 100 micrometer and a second dimension distinct from the first dimension no less than one centimeter. Methods for making the organic solid crystal film are also described.

High refractive index birefringent organic solid crystal and methods of making thereof

A high-voltage optical transformer may include (1) an array of light-emitting devices that are connected in parallel with one another and are electrically coupled to an electrical input, (2) a transfer medium, and (3) an array of photovoltaic cells that (A) are optically coupled to the array of light-emitting devices via the transfer medium, (B) are connected in series with one another, and (C) produce an electrical output whose voltage is higher than the electrical input. Various other apparatuses, systems, and methods are also disclosed.

Apparatus, system, and method for stepping up high voltages within small form factors via optical couplings including an array of photovoltaic cells optically coupled to parallelly connected light emitting devices via a transfer medium

Various embodiments set forth light emission display elements, and display devices that include such display elements. In some embodiments, a display element includes an electroluminescent light source and a pair of reflective elements that form a resonant cavity for a particular range of wavelengths and/or a particular polarization of light. One or both of the reflective elements can include meta-reflectors, such as anisotropic meta-reflectors or chiral meta-reflectors. An optional waveplate can be placed between the reflective elements to adjust the polarization state of light emitted by the display element.

Light emission display element and device with polarized and angularly-controlled output

LED apparatuses and corresponding manufacturing techniques are described. In some examples, an LED apparatus includes a mesa etched from a layered epitaxial structure. The layered epitaxial structure includes a quantum well layer and a barrier layer adjacent to the quantum well layer. The barrier layer overhangs the quantum well layer as a result of the quantum well layer having been etched to a greater depth compared to the barrier layer. In some examples, the quantum well layer and the barrier layer are etched together to produce an area where the barrier layer overhangs the quantum well layer. Etching of the quantum well layer and the barrier layer can be performed after the layered epitaxial structure has been etched to form the mesa, in order to reduce surface imperfections leftover from the mesa etch. In some examples, one or more regrowth semiconductor layers are formed over etched facets of the mesa.

In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

A method of forming a high voltage optical transformer includes forming a via through a transparent carrier wafer, forming a conductive layer within the via, bonding a solid state lighting (SSL) package to a first side of the carrier wafer, and bonding a photovoltaic (PV) wafer to a second side of the carrier wafer opposite to the first side. The photovoltaic wafer may include an active area and a conductive area located outside of the active area that is in electrical contact with the conductive layer. The method further includes forming both an SSL contact with the solid state lighting package and a PV contact with the conductive layer on the same side of the carrier wafer.

Wafer-level 3D integration of high voltage optical transformer

A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

Monolithic light source with integrated optics based on nonlinear frequency conversion

Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

A micro-LED includes a light emitting device that emits a light beam surface&#x2014;normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.

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Kirkland, WA, United States of America

Anurag Tyagi