Harris Corporation

Other

Intersil Corporation

Anup Bhalla

John M Neilson

Sampat S Shekhawat

Christopher L Rexer

Louise E Skurkey

Linda Susan Brush

John Lawrence Benjamin

Richard Douglas Stokes

Frank Stensney

Jon Gladish

Christopher Boguslow Kocon

Christopher Michael Scarba

Joseph Leonard Cumbo

Jeffrey Allen Webster

Joseph Andrew Yedinak

An IGBT gate driver circuit includes means for detecting when the collector-to-emitter voltage (Vce) of a turned-on IGBT, intended to be operated in the saturation region, increases above a preset level, indicative of a fault condition, such as a short circuit. In response to such an increase in the Vce of a turned on IGBT, the IGBT is turned-off in two steps. First, the turn-on gate drive is decreased to a level that is still above the threshold (turn-on) voltage of the IGBT in order to decrease the current flowing through the IGBT and hence, the peak power dissipation. This decrease in the current through the IGBT and the peak power dissipation increases the length of time the IGBT can withstand a fault condition such as a short circuit. Then, after decreasing the gate drive to the IGBT, the gate drive is gradually decreased until the IGBT is completely turned off.

IGBT gate drive circuit with short circuit protection

A method of fabricating a MOS-gated semiconductor device in which arsenic dopant is implanted through a mask to form a first layer, boron dopant is implanted through the mask to form a second layer deeper than the first layer, and in which a single diffusion step diffuses the implanted arsenic and the implanted boron at the same time to form a P+ body region with an N+ source region therein and a P type channel region.

Method of making a MOS-gated semiconductor device with a single diffusion

Semiconductor bipolar power devices comprise a control electrode for turning on or off a first source of charge carriers into the device and a p-n junction emitter remote from the first source and acting in correspondence with the condition of the first source. The p-n junction is a heterojunction where the bandgap of the semiconductor material of the emitter side of the junction is less wide than the bandgap of the material on the base side for reducing the emitter injection efficiency in comparison with an otherwise identical device having a homojunction emitter.

Bipolar semiconductor power controlling devices with heterojunction

A method of manufacturing a semiconductor device and device in which a sacrificial N shelf layer is grown on a P+ semiconductor substrate to contain the out-diffusion of dopant from the substrate. An N+ buffer layer is grown on the N shelf layer and an N- epitaxial layer is grown on the N+ buffer layer. The presence of the N shelf layer, which is consumed by the substrate dopant during further device fabrication, allows the integrated dopant level of the N+ buffer layer to be accurately controlled in the finished device.

Method of forming power semiconductor devices with controllable

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Wilkes-Barre, PA, United States of America

Anup Bhalla