Teknologian Tutkimuskeskus Vtt Oy

Kyocera Technologies Oy

Kyocera Tikitin Oy

Teknologian Tutkimuskeskus Vtt

Valtion Teknillinen Tutkimuskeskus

Antti Jaakkola

Tuomas Pensala

Aarne Oja

Mika Prunnila

Panu Pekko

Panu Koppinen

Ville Saarela

James Dekker

Jyrki Kiihamäki

Sergey Gorelick

Maria Ganchenkova

Jyrki KIIHAMÄKI

A silicon microelectromechanical system, MEMS, resonator assembly, includes four flexural beam elements forming a rectangular frame, each beam element being connected at an end thereof to an end of a neighboring one of the beam elements. The resonator assembly further includes connection elements for connecting the rectangular frame to at least one mechanical anchor, and the resonator assembly supporting an in-plane flexural collective resonance mode.

Microelectromechanical system resonator assembly

A microelectromechanical (MEMS) resonator includes a spring-mass system having a first weight portion (M), a second weight portion (M), and a central spring portion (SP) in between the weight portions. The weight portions are connected (or mechanically attached) to the central spring portion and thus improving stability.

Spring-mass microelectromechanical resonator

A MEMS (microelectromechanical system) resonator with a material layer of single-crystalline silicon, at least one layer made of material with low thermal diffusivity to reduce thermoelastic dissipations in the MEMS resonator, a layer of piezoelectric material, and a layer made of electrically conducting material. The layer with low thermal diffusivity is between the single-crystalline silicon layer and the piezoelectric layer, or between the piezoelectric layer and the electrically conducting layer. The use of a material layer of low thermal diffusivity.

MEMS resonator with high quality factor and its use

A microelectromechanical (MEMS) resonator includes a resonator structure having a plurality of beam elements and connection elements with certain geometry, where the plurality of beam elements are positioned adjacent to each other and adjacent beam elements are mechanically connected to each other by the connection elements, where the geometry of the beam elements or the connection elements varies within the resonator structure.

MEMS resonator

A microelectromechanical resonator, including a support structure, a resonator element suspended to the support structure, the resonator element including a plurality of sub-elements, and an actuator for exciting the resonator element into a resonance mode. The sub-elements are dimensioned such that they are dividable in one direction into one or more fundamental elements having an aspect ratio different from 1 so that each of the fundamental elements supports a fundamental resonance mode, which together define a compound resonance mode of the sub-element. The sub-elements are further coupled to each other by connection elements and positioned with respect to each other such that the fundamental elements are in a rectangular array configuration, wherein each fundamental element occupies a single array position, and at least one array position of the array configuration is free from fundamental elements.

MEMS resonator array arrangement

A microelectromechanical resonator assembly includes a first rectangular resonator array and a second rectangular resonator array, where the first rectangular resonator array and the second rectangular resonator array each have at least two rectangular resonator sub-elements, and the at least two rectangular resonator sub-elements are coupled to each other by one or more connection elements, and the first rectangular resonator array and the second rectangular resonator array are coupled to each other by one or more connection elements.

Coupled MEMS resonator

A microelectromechanical resonator includes a support structure, a resonator element suspended to the support structure, and an actuator for exciting the resonator element to a resonance mode. The resonator element includes a plurality of adjacent sub-elements each having a length and a width and a length-to-width aspect ratio of higher than 1 and being adapted to a resonate in a length-extensional, torsional or flexural resonance mode. Further, each of the sub-elements is coupled to at least one other sub-element by one or more connection elements coupled to non-nodal points of the of said resonance modes of the sub-elements for exciting the resonator element into a collective resonance mode.

A temperature-compensated microelectromechanical oscillator and a method of fabricating thereof. The oscillator includes a resonator element including highly doped silicon and an actuator for exciting the resonator body into a resonance mode having a characteristic frequency-vs-temperature curve. The properties of the resonator element and the actuator are chosen such that the curve has a high-temperature turnover point at a turnover temperature of 85&#xb0; C. or more. In addition, the oscillator comprises a thermostatic controller for keeping the temperature of the resonator element at said high turnover temperature.

Oven-controlled frequency reference oscillator and method of fabricating thereof

The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions () in the plane of the resonator element, wherein the at least two regions have different thicknesses.

Micromechanical resonator and method for trimming micromechanical resonator

The present disclosure describes a micromechanical resonator comprising a resonator element () having a length (l) and a width (w) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side () of the resonator element. The first location divides the width (w) of the resonator element into a larger portion (w) and a smaller portion (w) such that a ratio between said smaller portion (w) and the whole width (w) is in a range of 0.10 to 0.28. The second location is at a longer side (). The second location divides the length (l) of the resonator element into a larger portion (l) and a smaller portion (l) such that a ratio between said smaller portion (l) and the whole length (l) is in a range of 0.36 to 0.48.

Micromechanical resonator

A frequency reference oscillator device and method of providing a frequency reference signal. The oscillator device includes a first oscillator including a first resonator having first long-term stability and a first frequency-vs-temperature turnover temperature, the first oscillator being capable of providing a first frequency signal. Further, the device includes and a second oscillator including a second resonator having second long-term stability, which is inferior to the first long-term stability, and a second frequency-vs-temperature turnover temperature, the second oscillator being capable of providing a second frequency signal. There is also provided a thermostatic controller for adjusting the temperature of the first resonator essentially to said first turnover temperature and the temperature of the second resonator essentially to said second turnover temperature, and a stability control circuit configured to use the first frequency signal for adjusting the second oscillator for providing a temperature stabilized and long-term stabilized output frequency signal.

Frequency reference oscillator device and method of stabilizing a frequency reference signal

The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*10cmor more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Temperature compensated beam resonator

The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Temperature compensated compound resonator

The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*10cmor more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF) to be 12 ppb/Cor less at least at one temperature. Several practical implementations are presented.

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Espoo, Finland

Antti Jaakkola