Lam Research Corporation

Novellus Systems Incorporated

Antonio Xavier

Ramesh Chandrasekharan

Adrien Lavoie

Ming Chu Li

Dennis Michael Hausmann

Shankar Swaminathan

Mandyam Sriram

Jon Henri

Hu Kang

Frank Loren Pasquale

Easwar Srinivasan

Thomas W Mountsier

Jennifer Leigh Petraglia

Ryan Blaquiere

Thomas G Jewell

Tom Dorsh

Bryan Schlief

Meenakshi Mamunuru

Steven Goza

Joseph Nesmith

Bart Jan Van Schravendijk

Adrien LaVoie

Dirk Rudolph

Bart K Van Schravendijk

A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

Systems and methods for reducing effluent build-up in a pumping exhaust system

A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Substrate processing systems including gas delivery system with reduced dead legs

A throttle valve includes a throttle body including a housing having an inner surface. The throttle body includes first and second stop surfaces arranged on the inner surface. A throttle plate is rotatable inside the housing of the throttle body about a shaft between closed and open positions. A first projection is located on a first surface of the throttle plate adjacent to a radially outer end of the throttle plate. A second projection is located on a second surface of the throttle plate adjacent to a radially outer end of the throttle plate. The second surface is opposite the first surface. The first and second projections extend outwardly from the throttle plate in opposite directions and in corresponding directions of rotational movement of the throttle plate during closing to bias against the second stop surface when the throttle valve is closed.

High-conductance, non-sealing throttle valve with projections and stop surfaces

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Plasma activated conformal film deposition

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West Linn, OR, United States of America

Antonio Xavier