L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

American Air Liquide, Inc.

Voltaix, LLC

Air Liquide Advanced Materials, Inc.

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Antonio Sanchez

Jean-Marc Girard

Peng Zhang

Gennadiy Itov

Manish Khandelwal

Matthew Damien Stephens

Reno Pesaresi

Nicolas Blasco

Grigory Nikiforov

Zhiwen Wan

Sean Kerrigan

David Orban

Yang Wang

Glenn Kuchenbeiser

Guillaume Husson

Cole Ritter

Raphael Rochat

Jooho Lee

Rocio Alejandra Arteaga Muller

Santiago Marques-Gonzalez

Clément Lansalot-Matras

Changhee Ko

Rocio Arteaga

Gennadily Itov

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula(SiH(NR)X)N(SiHX),wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n&#x2265;1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR']; further wherein each R&#x2032; of the [SiR&#x2032;] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [&#x2014;NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d&#x2260;0; or d=0, c&#x2260;0.

Si-containing film forming precursors and methods of using the same

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X&#x2550;N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X&#x2550;N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N&#x2014;SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Si-containing film forming compositions are disclosed comprising a precursor having the formula [&#x2014;NR&#x2014;RRSi&#x2014;(CH)&#x2014;SiRR&#x2014;]wherein n=2 to 400; R, R, R, R, and Rare independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R, R, R, and Ris H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [&#x2014;NH&#x2014;SiH&#x2014;CH&#x2014;SiH&#x2014;], and [&#x2014;N(SiH&#x2014;CH&#x2014;SiH)&#x2014;SiH&#x2014;CH&#x2014;SiH&#x2014;].

Si-containing film forming compositions and methods of making and using the same

Compounds and method of preparation of Si&#x2014;X and Ge&#x2014;X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si&#x2014;H and a X&#x2014;H moiety to form a Si&#x2014;X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The &#x2014;Si&#x2014;X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si&#x2014;containing films.

To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below RRRGe&#x2014;Co(CO)(1) (where R, Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)RRGe&#x2014;Co(CO)(2) (where Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).

Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof

Solid or liquid N&#x2014;H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [&#x2014;N(SiH)(SiH&#x2014;)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

N&#x2014;H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

Disclosed are methods of synthesizing and using Titanium-containing film forming compositions comprising titanium halide-containing precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula(SiH(NR)X)N(SiHX),wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n&#x2265;1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR']; further wherein each R&#x2032; of the [SiR&#x2032;] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [&#x2014;NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group.

Titanium-containing film forming compositions comprising titanium halide-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Growing community of inventors

Tsukuba, Japan

Antonio Sanchez