Ausimont S.p.a.

Solvay Solexis S.p.a.

Stmicroelectronics S.r.l.

Sgs-thomson Microelectronics S.r.l.

Austmont S.p.a.

Solvay Specialty Polymers Italy S.p.a.

Antonio Russo

Claudio Tonelli

Simone Bartoli

Mauro Luigi Sali

Walter Navarrini

Patrizia Serenella Maccone

Lorenzo Bedarida

Mario Visca

Ezio Strepparola

Piero Gavezotti

Gabriella Carignano

Claudio Nava

Geoffrey Scott Underwood

Paolo Baratta

Michael Quallo

Piero Savarino

A composition useful for imparting durable stain repellence and soil release properties to textile substrates, a method for treating textile substrates using such composition, and the textile substrates obtained therefrom. The composition comprises: (A) at least one fluorinated ionisable polyurethane polymer (PUR) being free from perfluoroalkyl chains and comprising at least one fluorinated block comprising a fluoropolyoxyalkene chain, and at least one functional block comprising an hydrocarbon chain (R) having from 2 to 14 carbon atoms, said chain (R) comprising at least one ionisable group, said blocks being linked by urethane moieties of formula (I), wherein E is a divalent hydrocarbon carbon group; (B) at least one fluorocarbon polymer (F) comprising at least one perfluoroalkyl chain (R) linked by one or more ester moiety of formula (II) and/or urethane moiety of formula (III) and/or urea moiety of formula (IV); and (C) at least one crosslinking agent. 

Fluorinated polyurethane composition

Compounds having the following formula: wherein:

(PER) fluoropolyether compounds

Additives for fluorinated oils

Compounds formed of (per)fluoropolyether chains and end groups having a pyridine structure, with structural formula:T-CW&#x2014;O&#x2014;R&#x2014;CW-T&#x2003;&#x2003;(I)wherein 

Perfluoropolyether additives

Carboxylic acids comprising perfluoropolyether chains, of formula:T&#x2014;CFW&#x2014;O&#x2014;R&#x2014;CFW&#x2014;T&#x2003;&#x2003;(I)wherein T, T, equal to or different from each other, are selected from the group formed of &#x2014;CH&#x2014;B&#x2014;Y&#x2014;(COOH), &#x2014;CH(CF) O&#x2014;Y(COOH), &#x2014;F, &#x2014;CF, &#x2014;CF, &#x2014;(CF)Cl, wherein B=&#x2014;O&#x2014; or &#x2014;S&#x2014;; Y=C&#x2014;Calkylene chain, n=1-4; with the proviso that at least one of the two end groups T, Tbe &#x2014;CH&#x2014;B&#x2014;Y&#x2014;(COOH), &#x2014;CH(CF)O&#x2014;Y(COOH); W, W, equal to or different from each other, are &#x2014;F or &#x2014;CF; Ris a (per)fluoropolyoxyalkylene chain formed of one or more repeating units, statistically distributed along the chain, having a number average molecular weight in the range 500-10,000.

(per) fluoropolyether carboxylic acids and use thereof for the oleo-repellent paper sizing

Cyclic phosphazene compounds of formula (I):wherein:

Cyclic phosphazene compounds and use thereof as additives of perfluoropolyether oils

Process for obtaining mixtures of phosphoric mono- and diesters

Process for the preparation of fluoropolyoxyalkylenes having one end group -CH2OH and the other end group containing chlorine

Process for the preparation of perfluoropolyoxyalkylenes with hydroxyl end groups

Perfluorodioxoles

An electrically alterable semiconductor memory includes at least two memory sectors the content of which is individually alterable, and a control circuit for controlling operations of electrical alteration of the content of the memory, permitting the selective execution of an operation of electrical alteration of the content of one of the memory sectors with the possibility of suspending the execution to permit read access to the other of the memory sectors. The control circuit is also capable of permitting, during the suspension, an operation of burst mode or page mode reading of the content of the other memory sector.

Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration

An architecture handles internal voltages in a non-volatile memory array which is split into at least first and second mutually independent banks. The architecture includes first and second pluralities of generators for generating at least one of the internal voltages, which are separate from each other and connected to the first and second banks, respectively, of the nonvolatile memory array; and a control system connected to the pluralities of generators to handle the correct activation of the different generators in the different conditions of the memory array operation.

Architecture for handling internal voltages in a non-volatile memory, particularly in a single-voltage supply type of dual-work flash memory

A semiconductor device includes at least two pads for the input of external signals and/or for the output of signals from said semiconductor device, at least two uncoupling buffers each connected to each one of said pads, at least one multiplexer connected to said pads by means of said uncoupling buffers and at least one memory element suitable to generate a configuration signal operating on said multiplexer and said uncoupling buffers to selectively enable one or the other of said pads.

Semiconductor device with selectable pads

Copolymers of perfluorodioxoles

Fluorinated triazinic compounds having the formula:

Fluorinated triazinic compounds

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Milan, Italy

Antonio Russo