Tokyo Electron Limited

Antonio Rotondaro

Mitsuaki Iwashita

Kenji Sekiguchi

Ryuichi Asako

Koji Akiyama

Hirokazu Ueda

Takashi Hayakawa

Yoji Iizuka

Derek Bassett

Ihsan Simms

Trace Quentin Hurd

Takeo Nakano

Naoki Umeshita

Dipak Aryal

A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Vacuum processing apparatus and oxidizing gas removal method

A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.

Etching of silicon nitride and silica deposition control in 3D NAND structures

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Antonio Rotondaro