Tokyo Electron Limited

Antonio Luis Pacheco Rotondaro

Derek Bassett

Ihsan Simms

Trace Quentin Hurd

Michael Carcasi

Joshua Hooge

Wallace Paul Printz

Hitoshi Kosugi

Hiroshi Marumoto

Joel Estrella

Mitsuaki Iwashita

Ryuichi Asako

Masami Yamashita

Paul Abel

Tamotsu Morimoto

Naoyuki Okamura

Takeo Nakano

Dipak Aryal

Shuhei Takahashi

Embodiments of improved methods and processes are provided for patterning a semiconductor substrate using direct self-assembly (DSA) of ionic liquid crystals (ILCs). In the disclosed embodiments, an ILC solution comprising ILCs is deposited on a variety of substrate surfaces. An upper surface of the ILC solution is exposed to a gas phase, non-polar solvent (such as, e.g., hexane gas). The gas phase, non-polar solvent provides an ambient environment that promotes self-assembly of the ILCs into vertically layered ILC structures.

Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate

A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

Bath systems and methods thereof

In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

System and methods for wafer drying

In one exemplary embodiment, described herein are innovative techniques for reducing the attractive force between particles and a substrate surface to aid in the removal of particles from the substrate surface. More specifically, a multi-electrode chuck is utilized to assist in cleaning a substrate. The multi-electrode chuck is utilized to reduce the attractive forces between particles and the substrate and to move the loosened particles that are present on the substrate surface. The electrodes of the chuck are biased with alternating current (AC) voltages with a phase shift between the electrode bias waves. The resulting electric field wave on the substrate surface loosens the particles by polarizing the particles and moves the loosened particles across the substrate.

Apparatus and method to electrostatically remove foreign matter from substrate surfaces

Embodiments of the invention provide a method for treating a microelectronic substrate with dilute TMAH. In the method, a microelectronic substrate is received into a process chamber, the microelectronic substrate having a layer, feature or structure of silicon. A treatment solution is applied to the microelectronic substrate to etch the silicon, where the treatment solution includes a dilution solution and TMAH. A controlled oxygen content is provided in the treatment solution or in an environment in the process chamber to achieve a target etch selectivity of the silicon, or a target etch uniformity across the layer, feature or structure of silicon, or both by the treatment solution.

Method of treating a microelectronic substrate using dilute TMAH

A method for controlling the temperature profile of phosphoric acid process over a wafer surface through the dynamic control of radial dispensing of sulfuric acid at a selected temperature, which includes providing a substrate with a layer formed thereupon; dispensing a first chemical and second chemicals onto the layer while adjusting at least one parameter of the second chemical dispense to vary the etch rate across a region of the substrate.

Method and apparatus for dynamic control of the temperature of a wet etch process

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Austin, TX, United States of America

Antonio Luis Pacheco Rotondaro