International Business Machines Corporation

Cambridge Enterprise Limited

Nokia Technologies Oy

Karlsruher Institut Fur Technologie

Antonio Lombardo

Andrea Carlo Ferrari

Michael Engel

Phaedon Avouris

Mathias B Steiner

Alan Colli

Ralph Krupke

Ilya Goykhman

Dhiren Manji Kara

Carmen Palacios Berraquero

Mete Atature

Tim J Echtermeyer

Shakil A Awan

Tero S Kulmala

Matteo Barbone

Shakil Awan

Tero Kulmala

Tim Echtermeyer

A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.

Layered material based quantum light emitting device

An apparatus including first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material include graphene, and wherein the apparatus is configured such that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material.

Graphene-based MIM diode and associated methods

A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.

Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure

Growing community of inventors

Cambridge, United Kingdom

Antonio Lombardo