Micron Technology Incorporated

Antonio Imperiale

Ciro Feliciano

Aniello Palomba

Methods, systems, and devices for threshold voltage scans are described. A memory device may receive a configuration for scanning a memory array during a scanning procedure. The memory device may read, during the scanning procedure, one or more memory cells of the memory array using a first voltage value that is indicated by the configuration. The memory device may store, during the scanning procedure, a first value in a first counter in response to reading the one or more memory cells of the memory array. The memory device may determine whether to terminate the scanning procedure in response to one or both of determining that the first quantity of memory cells satisfies a threshold quantity of memory cells or determining that the first voltage value satisfies a threshold voltage value to be scanned.

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Caserta, Italy

Antonio Imperiale