Selex Sistemi Integrati S.p.a.

Leonardo S.p.a.

Antonio Cetronio

Marco Peroni

Claudio Lanzieri

Simone Lavanga

Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device () including a semi-insulating substrate (); an epitaxial substrate () formed on the semi-insulating substrate () a contact layer (). The contact layer () includes a lightly doped contact layer () formed on the Schottky layer (), and a highly doped contact layer () formed on the lightly doped contact layer () and having a doping concentration higher than the lightly doped contact layer (). The PHEMT power device () further includes a&#x2014;wide recess () formed to penetrate the highly doped contact layer () and a narrow recess () formed in the wide recess () to penetrate the lightly doped contact layer (). The gate electrode () is formed in the narrow recess () and in Schottky contact with the Schottky layer ().

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Frascati, Italy

Antonio Cetronio