Stmicroelectronics S.r.l.

Stmicroelectronics (rousset) Sas

Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (alps) Sas

Stmicroelectronics Gmbh

Stmicroelectronics (grenoble 2) Sas

Stmicroelectronics International N.v.

Antonino Conte

Francesco La Rosa

Enrico Castaldo

Carmelo Ucciardello

Francesco Tomaiuolo

Gianbattista Lo Giudice

Maria Giaquinta

Michelangelo Pisasale

Giovanni Matranga

Marco Ruta

Alfredo Signorello

Mario Micciche

Rosario Roberto Grasso

Agatino Massimo Maccarrone

Carmelo Paolino

Maurizio Giovanni Gaibotti

Raul Andres Bianchi

Santi Nunzio Antonino Pagano

Thomas Jouanneau

Kailash Khairnar

Mario Micciche′

Oreste Concepito

Maurizio Francesco Perroni

Nicolas Demange

Salvatore Polizzi

Giampiero Sberno

Stefania Rinaldi

SantiNunzioAntonino Pagano

Gianbattista Logiudice

Mario Micciche'

Alberto Jose Di Martino

Anna Rita Maria Lipani

Alin Razafindraibe

Thibault Mortier

FrancescoNino Mammoliti

Paola Zuliani

Tommaso Zerilli

Salvatore Torrisi

Francesca Grande

Gaetano Palumbo

Francesco Nino Mammoliti

Domenico Pappalardo

Alberto Jose' Di Martino

Diego De Costantini

Vincenzo Sambataro

Francois Maugain

Loredana Chiaramonte

Alberto Jose′ Di Martino

AlbertoJose′ Dimartino

Alberto Jose' Dimartino

Mario Micchche'

De Costantini Diego

Roerto Annunziata

Carmine D'Alessandro

Leopoldo Maria Marino

Alberto Josè Di Martino

Salvatore Preciso

Alberto José Di Martino

Stefano Lo Giudice

Rosanna Maria La Rocca

Marion Helne Grimal

Pietro Antonino Coppa

Vincenzo Russo

Santi Pagano

Mario Miccichè

In a non-volatile memory device, a memory sector is provided. The memory sector includes a plurality of tiles arranged horizontally. Each tile includes a plurality of memory cells arranged in horizontal word lines and vertical bit lines. A pre-decoder is configured to receive a set of encoded address signals to produce pre-decoding signals. A central row decoder is arranged in line with the plurality of tiles, receives the pre-decoding signals and produces level-shifted pull-up and pull-down driving signals for driving the word lines. First buffer circuits are arranged on a first side of each tile. Each of the first buffer circuits is coupled to a respective word line, receives a level-shifted pull-up driving signal and a level-shifted pull-down driving signal, and selectively pulls up or pulls down the respective word line as a function of the values of the received signals.

Non-volatile memory device and corresponding method of operation

In an embodiment, a non-volatile memory device is proposed. The device includes a plurality of local pull-up stages distributed along a group of memory portions in a memory array. Each local pull-up stage includes, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type. The local pull-up transistors of each local pull-up are configured to locally decouple the corresponding wordline from a node at a first reference potential in response to a wordline that extends through the group of memory portions being selected, and locally couple the corresponding wordline to the node at the first reference potential in response to all the wordlines that extend through the group of memory portions being deselected to restore locally a deselection voltage on a wordline previously selected.

Non-volatile phase-change memory device including a distributed row decoder with n-channel MOSFET transistors and related row decoding method

In an embodiment a method for convolutional computation (CNVL) of input values with weight factors includes converting the input values to voltage signals and successively applying the voltage signals on selected bit lines in an array of non-volatile memory points over respective time slots, each memory point comprising a phase-change resistive memory cell coupled to a bit line and having a resistive state corresponding to a weight factor, and a bipolar selection transistor coupled in series with the phase-change resistive memory cell and having a base terminal coupled with a word line, wherein the respective voltage signals bias the respective phase-change memory cells, integrating over the successive time slots read currents resulting from the voltage signals biasing the respective phase-change resistive memory cells and flowing through selected word lines and converting the integrated read currents to output values.

Method for in-memory convolutional computation and corresponding integrated circuit

A system a ring oscillator configured to produce a set of clock signals having the same clock period and a mutual time delay between respective clock signal edges. Comparator circuits are coupled to first and second input nodes and produce a set of comparison signals according to a respective sequence of comparison phases. A set of synchronization circuits is coupled to the ring oscillator and to the plurality of comparator circuits. The synchronization circuits allot, to each one of the comparator circuits, respective time windows for communication over respective communication lines of the comparison signals. The respective time windows are synchronized based on the clock signals. A multiplexer couples the respective communication lines to an output line to sequentially enable each of the comparator circuits to sequentially output respective comparison signals over the output line for the respective time windows thereby forming a composite comparison signal evolving over time.

Comparator systems and methods

An electronic system is configured to generate a sequential logic signal. The electronic system includes a first ring oscillator including a first plurality of cascaded inverter stages. A combinational logic circuit is configured to generate the sequential logic signal by combining signals at the output terminals of at least two of the inverter stages of the first ring oscillator. The electronic system further includes a second ring oscillator including a second plurality of cascaded inverter stages. A bias current source is configured to supply the inverter stages of the second ring oscillator with a bias current, and a first voltage is generated at the inverter stages of the second ring oscillator. A voltage follower is configured to supply the inverter stages of the first ring oscillator with a second voltage corresponding to the first voltage generated at the inverter stages of the second ring oscillator.

Electronic system, integrated circuit, and method for generating sequential signals

A LDO regulator circuit comprises an input comparator and driver circuitry including transistors having a current flow path therethrough coupled to an output node of the regulator. First and second driver each comprises: driver transistors having the current flow paths therethrough coupled to the output node, capacitive boost circuitry that applies to the drive transistors a voltage-pumped replica of the comparison signal. Voltage refresh transistor circuitry coupled to the capacitive boost circuitry transfer thereon the voltage-pumped replica. The first and second drivers can be controllably switched between a first mode of operation, during which the current flow path through the driver transistors is conductive or non-conductive based on the voltage-pumped replica of the comparison signal, and a second mode, during which the voltage refresh transistor circuitry is activated to transfer the voltage-pumped replica of the comparison signal, and the current flow path through the driver transistors is non-conductive.

Low drop-out regulator circuit, corresponding device and method

A level-shifter circuit receives one or more input signals in an input level domain and includes provides at an output node an output signal in an output level domain shifted with respect to the input level domain. The circuit includes output circuitry including a first drive node and a second drive node that receive first and second logical signals so that the output signal has a first output level or a second output level in the output level domain as a function of at least one of the first and second logical signals. The circuit includes first and second shift capacitors coupled to the first and second drive nodes as well as capacitor refresh circuitry.

Level shifter circuit, corresponding device and method

A method for accessing memory cells in an array of memory cells storing respective data signals, wherein memory cells in the array of memory cells have a first, resp. second, node selectively couplable to respective bitline branches in a first, resp. second, set of bitline branches, wherein the first and the second set of bitline branches provide at least one bitline capacitance configured to store a bias level of charge in response to being charged.

Method for accessing memory cells, corresponding circuit and data storage device

Unclonable function circuitry includes a plurality of pairs of phase-change memory cells in a virgin state, and sensing circuitry coupled to the plurality of pairs of phase-change memory cells in the virgin state. The sensing circuitry identifies a subset of the plurality of pairs of phase-change memory cells in the virgin state based on a reliability mask. Signs of differences of effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state are sensed by the sensing circuitry. The sensing circuitry generates a string of bits based on the sensed signs of differences in the effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state. Processing circuitry coupled to the unclonable function circuitry, in operation, executes one or more operations using the generated string of bits.

Integrated circuit including a physically unclonable function device and corresponding method for implementing a physically unclonable function

In an embodiment a method programming floating gate transistors belonging to non-volatile memory cells to multilevel threshold voltages respectively corresponding to the weight factors, performing a sensing operation of the programmed floating gate transistors with a control signal adapted to make the corresponding memory cells become conductive at an instant determined by a respective programmed threshold voltage, performing the convolutional computation by using the input values during an elapsed time for each memory cell to become conductive and outputting output values resulting from the convolutional computation.

Method and apparatus for convolutional computation based on floating gate NVM array

In an embodiment a circuit includes a plurality of memory cells, wherein each memory cell includes a phase-change memory storage element coupled in series with a respective current-modulating transistor between a supply voltage node and a reference voltage node, the current-modulating transistors being configured to receive a drive signal at a control terminal and to inject respective programming currents into the respective phase-change memory storage element as a function of the drive signal, a driver circuit configured to produce the drive signal at a common control node, wherein the common control node is coupled to the control terminals of the current-modulating transistors, the drive signal modulating the programming currents to produce SET programming current pulses and RESET programming current pulses and at least one current generator circuit configured to inject a compensation current for the programming currents into the common control node.

Driver circuit for phase-change memory cells and method of driving phase-change memory cells

In accordance with an embodiment, a digital-to-analog converter (DAC) includes: a W-2W current mirror that includes a first plurality of MOS transistors having a first width, and second plurality of MOS transistors having a second width that is twice the first width, where ones of the second plurality of MOS transistors are coupled between drains of adjacent ones of the first plurality of MOS transistors; and a bulk bias generator having a plurality of output nodes coupled to corresponding bulk nodes of the first plurality of MOS transistors, wherein the plurality of output nodes are configured to provide voltages that are inversely proportional to temperature.

Digital-to-analog converter circuit

In an embodiment a non-volatile memory device includes a memory array having a plurality of memory cells, a control unit operatively coupled to the memory array, a biasing stage controllable by the control unit and configured to apply a biasing configuration to the memory cells to perform a memory operation and a reading stage coupled to the memory array and controllable by the control unit, the reading stage configured to verify whether the memory operation has been successful based on a verify level, wherein the control unit is configured to adaptively modify a value of the verify level based on an ageing of the memory cells.

Non-volatile memory device with improved cell cycling and corresponding method for operating the non-volatile memory device

In an embodiment, a non-volatile memory device includes a memory array including a plurality of memory portions, each memory portion having a respective plurality of memory cells arranged in rows and columns, wherein the memory portions are arranged in groups, each group of memory portions having a plurality of respective memory portions arranged in a row and a plurality of respective wordlines that extend through the respective memory portions, and wherein the memory cells of the memory portions of the group are coupled to the respective wordlines and a row decoder including a pre-decoding stage configured to execute a selection, in which it selects a wordline that extends through a group of memory portions and deselects other wordlines that extend through the group of memory portions, and a subsequent deselection, in which it deselects all the wordlines that extend through the group of memory portions, wherein the row decoder further includes, for each group of memory portions, a shared pull-up stage configured to decouple from or couple to a node at a first reference potential each wordline that extends through the group of memory portions, when the wordline is respectively selected or deselected, so as to impose on each wordline, when deselected, a deselection voltage, a plurality of pull-down stages distributed along the group of memory portions, each pull-down stage being configured to locally couple each wordline that extends through the group of memory portions, when selected, to a node at a second reference potential, so as to impose locally a selection voltage on the wordline, wherein each pull-down stage is further configured to locally decouple from the node at the second reference potential each wordline that extends through the group of memory portions, when deselected; and a number of local pull-up stages distributed along the group of memory portions, each local pull-up stage having, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type.

In an embodiment a ring oscillator circuit includes a chain of cascade-coupled inverter stages coupled between an oscillator supply voltage node and a reference voltage node, the oscillator supply voltage node configured to provide an oscillator supply voltage, a current generator circuit coupled between the oscillator supply voltage node and a system supply voltage node configured to provide a system supply voltage, the current generator circuit being configured to inject a current into the oscillator supply voltage node and a biasing circuit including a first bias control transistor and a second bias control transistor coupled in series between the reference voltage node and the oscillator supply voltage node, wherein the first bias control transistor is configured to selectively couple the reference voltage node and the oscillator supply voltage node in response to the oscillator control signal being indicative that the ring oscillator circuit is in an inactive operation state.

Ring oscillator circuit

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Tremestieri Etneo, Italy

Antonino Conte