Medical University of South Carolina

Antonello Monti

Marco Riva

Jason D Bakos

Bo Wang

Salvatore D'Arco

A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.

Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs)

A system for power hardware in the loop testing is described. The system includes a power system and a control system, the power system connected to a power converter of a device under test, the control system being in communication with the power system and the power converter. The control system determines the voltage input to the power system by utilizing the voltage output of the power converter, the voltage input determination being made by a control algorithm comprising. 

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Irmo, SC, United States of America

Antonello Monti