Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

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Wacker Siltronic Gesellschaft Fur Halbleitermaterialien

Wacker Chemitronic Gesellschaft

Wacker Siltronic Gesellschaft F{umlaut Over (u)}r Halbleitermaterialien Ag

Anton Schnegg

Gerhard Brehm

Helene Prigge

Herbert Jacob

Robert Rurlander

Laszlo Fabry

Franz Kohl

Roland Brunner

Werner Zulehner

Andreas Ehlert

Georg Hochgesang

Franz Mangs

Laszlo Fabby

Gertrud Valouch

Gertraud Thalhammer

Fritz Ketterl

Karl Lener

Norbert Franze

Peter Hahn

Hubert Piontek

Gabriele Lechner

Robert Rurlaender

Peter Nusstein

A process is for producing a semiconductor wafer with a front surface and a back surface, in which the semiconductor wafer is subjected to two-sided polishing. The process includes the following: (a) producing a hydrophobic surface on the semiconductor wafer by treating the semiconductor wafer with an aqueous HF solution; (b) simultaneous polishing of the front surface and the back surface of the semiconductor wafer with a surface which has been rendered hydrophobic, with an alkaline polishing abrasive being continuously supplied between two rotating upper and lower polishing plates, which are both covered with a polishing cloth, the pH of the polishing abrasive being from pH 8.5 to pH 12.5; (c) after an intended polishing abrasion has been reached, supplying a stopping agent to the semiconductor wafer; and (d) removing the semiconductor wafer from the polishing plates. There is also a carrier for the double-side polishing of at least one semiconductor wafer, having a cutout for holding the semiconductor wafer which is lined with a shaped part made from plastic. The shaped part is constructed in such a manner that it divides a free space between an edge of the semiconductor wafer and the carrier into a plurality of separate empty spaces.

Process for producing a semiconductor wafer

A method of mounting and demounting a semiconductor wafer, in which a temperature dependent adhesive and curable joint is provided by an adhesive mixture between the semiconductor wafer and a carrier plate. The adhesive mixture contains a colophonium resin which is chemically modified and esterified. The cured joint is released with water again after polishing the semiconductor wafer. The adhesive mixture suitable for carrying out the method is this resin with an amine which saponifies the resin.

Adhesive mixture suitable for mounting and demounting a semiconductor wafer

A cleaning agent and method are useful for cleaning semiconductor wafers. The aqueous cleaning agent has a pH of 1 to 5, preferably a pH of 1 to 3, and contains at least one surfactant and at least one compound which belongs to a group of compounds comprising succinic acid and its derivatives. To clean the semiconductor wafers, a thin film of cleaning agent is generated on the side faces of the semiconductor wafers, preferably using a mechanical tool.

Cleaning agent and method for cleaning semiconductor wafers

In the treatment of semiconductor slices, in particular silicon slices, w aqueous solutions containing hydrofluoric acid, a contamination of the slice surface with particles which interfere with the subsequent processes has been observed. This increase in particles can be markedly decreased by additionally adding to the solutions, organic ring molecules capable of forming inclusion compounds, such as, for instance, cyclodextrins, and/or acids with pKa below 3.14 which are incapable of oxidizing the semiconductor material. The actual treatment can be carried out in the usual way, for example, in immersion baths.

Process for the wet-chemical treatment of semiconductor surfaces

A process for preserving the surface of silicon wafers after the wafers are polished in a conventional polishing operation by converting the wafer surface to the hydrophobic state, in particular, by polishing, or with hydrofluoric acid and treating immediately afterwards with a reagent, e.g., alcohols, organosilanes or silanols and preferably in aqueous solution. The wafer becomes coated in this process with a protective layer which inhibits surface deterioration, and also permits long storage times.

Process for preserving the surface of silicon wafers

A process and apparatus for etching semiconductor surfaces, in particular, ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.

Process and apparatus for etching semiconductor surfaces

A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.

Method of haze-free polishing for semiconductor wafers

Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.

Silicon wafers for producing oxide layers of high breakdown strength and

A process for the chemical vapor deposition of oxidic particles by oxidat of halides or halide mixtures wherein dinitrogen monoxide is used as the oxidizing agent. The reaction is carried out at comparatively low temperatures of between 900.degree. and 1150.degree. C., but results in high yields.

Process for the chemical vapor deposition of oxidic particles

Indium phosphide surfaces can be polished if, during the mechanical polishing operation, which is carried out in a customary manner, a component that yields free chlorine in an aqueous acidic medium, and, at the same time, a component that yields free carbon dioxide are applied to the surface to be polished.

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Burghausen, Germany

Anton Schnegg