Trumpf Huettinger Gmbh + Co. Kg

Comet Ag

Trumpf Huttinger Gmbh + Co. Kg

Anton Labanc

Daniel Gruner

Andre Grede

André Grede

Alexander Alt

Daniel Krausse

Alberto Pena Vidal

Manuel Vor Dem Brocke

Roland Schlierf

Nikolai Schwerg

Markus Reiff

Christian Thome

Thomas Fink

Christan Thome

Philippe Dennler

Cyril Guinnard

Andreas Hartmann

Roland Sistemich

Samuel Vogel

Adam Galos

Thomas Staub

Janez Klanjsek

Kai Pankratz

René Rüttgers

Marcus Reiff

A method for generating an RF signal preferably for a plasma chamber including the steps of: generating an input RF signal on the basis of a first set of control parameters; detecting at least one distorted RF signal; synchronizing the at least one distorted RF signal with the input RF signal; determining a difference between a target RF signal and the at least one distorted RF signal being synchronized; if the difference is larger than a predetermined threshold, determining a second set of control parameters based on the comparison of the target RF signal and the at least one distorted RF signal being synchronized; and generating an adapted input RF signal on the basis of the second set of control parameters such that the difference between the target RF signal and the distorted RF signal is reduced.

Method for generating an RF signal, controller, RF generator and plasma apparatus

Provided is a generator including a power amplifier, at least one sampler, an RF output, a signal generator, a controller including a digital control portion and an analogue control portion, an analogue feedback path between the at least one sampler and the controller enabling an analogue signal representation of a signal to be provided to the controller, and a digital feedback path between the at least one sampler and the controller enabling a digital signal representation of the signal to be provided to the controller. The controller is configured to adjust the RF signal at the RF output from a first state into a second state based on the analogue signal representation and/or the digital signal representation.

RF power generator with analogue and digital detectors

A radio-frequency generator, including a power amplifier module including a power amplifier, a pickup module connected to an output of the power amplifier to generate a pickup signal, and an output configured to be connected to the respective output of the amplifier and configured to output a radio-frequency output signal. The radio-frequency generator includes a measurement module configured to receive the pickup signal and to generate a measurement signal based on the one pickup signal; and a radio-frequency signal generation module configured to generate two or more carrier signals of different frequency, and to provide a drive signal as input to the power amplifier module, and a regulation module configured to receive the measurement signal, and to regulate the power of the radio-frequency output signal based on the measurement signal.

Radio frequency generator

A radiofrequency, RF, power amplifier, including at least one field-effect transistor, FET, wherein a source terminal of the at least one FET is connected to ground. At least one diode is included, wherein a cathode of the at least one diode is connected to a drain terminal of the at least one FET and an anode of the at least one diode is connected to ground. An output network is connected to the drain terminal of the at least one FET. An input network is connected to a gate terminal of the at least one FET.

Radiofrequency power amplifier

A control unit for generating a plurality of synchronized radio frequency (RF) output signals (RF) each having a respective output frequency (f), phase (Φ), and amplitude (A), including The disclosure further describes a radio frequency (RF) power generator, an arrangement of at least two such radio frequency (RF) power generators, and a method each for generating a plurality of synchronized radio frequency (RF) output signals (RF).

Control unit, radio frequency power generator, and method for generating synchronized radio frequency output signals

The high-frequency amplifier assembly for a high-frequency generator, in particular for a high-frequency generator for operating a plasma generator, is provided with a signal generator for generating a high-frequency signal; a first amplifier transistor for amplifying the signal generated by the signal generator; an output terminal for outputting the amplified signal to an external load; an input network arranged between the signal generator and the first amplifier transistor for providing the high-frequency signal at the input of the amplifier transistor; an output network arranged between the amplifier transistor and the external load for providing a desired load impedance for the amplifier transistor; and an electronic voltage-limiting assembly arranged at the output terminal for limiting the output voltage at the output terminal.

High-frequency amplifier assembly for a high-frequency generator

An apparatus which includes: a circuit board having a radiofrequency (RF) structure at a first location thereof, the RF structure formed from a conductive trace of the circuit board; a heat carrier; and a multi-stack cooling structure coupling the circuit board and the heat carrier to each other. The multi-stack cooling structure including a first stack adjacent the RF structure at the first location and a second stack at a second location. The first stack including a dielectric layer adjacent the heat carrier, and a thermal interface material (TIM) that couples the dielectric layer and the circuit board to each other, the dielectric layer having higher thermal conductivity and higher rigidity than the TIM. The second stack including a metal layer adjacent the heat carrier, and the TIM that couples the metal layer and the circuit board to each other.

Multi-stack cooling structure for radiofrequency component

A generator including a power combiner is provided. The power combiner includes a plurality of inputs, each input connectable to a respective power amplifier for receiving a respective power signal. A plurality of impedance matching circuit branches is connected to a respective one of the plurality of inputs. Each impedance matching circuit branch includes at least one high pass filter section and at least one low pass filter section through which the respective power signal passes. The impedance matching circuit branches are connected so as to combine the power signals from each power amplifier. An output is provided for outputting the combined power signal.

Broadband power combining arrangement

Disclosed is an amplifier circuit for providing an output of at least 100 W, preferably of at least 200 W and most preferably of at least 250 W comprising a field effect transistor. A drain of the field effect transistor is connected with a protective feedback circuit. The protective feedback circuit is arranged to reduce an over-voltage energy at the drain of the field effect transistor if the voltage between the gate and a drain of the field effect transistor exceeds a feedback threshold voltage. Further disclosed is a radio frequency amplifier comprising an amplifier circuit, an electrical radio frequency generator comprising the radio frequency amplifier and a plasma processing system comprising an electrical radio frequency generator. Still further disclosed is a method of protecting a field effect transistor in an amplifier circuit.

High power amplifier circuit with protective feedback circuit

The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW at frequencies of at least 2 MHz. The apparatuses include two LDMOS transistors each connected by their source connection to ground. The transistors can have the same design and can be arranged in an assembly (package). The apparatus also includes a circuit board lying flat against a metallic cooling plate and connected to the cooling plate, which can be connected to ground, and the assembly is arranged on or against the circuit board. The apparatuses have a power transformer, whose primary winding is connected to the drain connections of the transistors, and a signal transmitter. A secondary winding of the signal transmitter is connected to the gate connections of the two transistors. Each of the gate connections is connected to ground via at least one voltage-limiting structural element.

High frequency amplifier apparatuses

A non-linear high-frequency amplifier arrangement suitable for generating power outputs &#x2265;1 kW at frequencies of &#x2265;1 MHz for plasma excitation is provided. The arrangement includes two LDMOS transistors each connected by their source connection to aground connection point, where the LDMOS transistors have the same design and are arranged in an assembly, a power transformer whose primary winding is connected to drain connections of the LDMOS transistors, a signal transformer whose secondary winding is connected by a first end to a gate connection of one LDMOS transistor and by a second end to a gate connection of the other LDMOS transistor, and a feedback path from the drain connection to the gate connection of each of the LDMOS transistors.

Non-linear high-frequency amplifier arrangement

A power combiner for coupling, splitting, or coupling and splitting high-frequency signals, the power combiner has a first input for a first high-frequency signal, a second input for a second high-frequency signal, an output, an equalizing connection, a first electrical conductor arranged between the first input and the output, wherein the first electrical conductor has a first total surface shaped primarily as a first planar surface electrode, a second electrical conductor arranged between the second input and the equalizing connection, wherein the second electrical conductor has a second total surface shaped primarily as a second planar surface electrode, and wherein the second electrical conductor is capacitively and inductively coupled to the first electrical conductor; and a cooling body, wherein more than 70% of the first total surface of the first electrical conductor is a same distance from the cooling body as the second total surface of the second electrical conductor.

Power combiner having a symmetrically arranged cooling body and power combiner arrangement

The invention describes a broadband matching network for coupling to an output of an amplifying device for amplifiers with a nominal operating frequency between 1 MHz and 100 MHz. The broadband matching network comprises a planar transformer with a primary winding arranged on a primary side of the broadband matching network and a secondary winding arranged on a secondary side of the broadband matching network. The primary winding is arranged to be electrically connected to the output of the amplifying device. The broadband matching network is characterized by a center frequency and a bandwidth with a frequency range of at least +/&#x2212;3%. A first parallel resonance frequency and a second parallel resonance frequency of the broadband matching circuit are arranged around the series resonance frequency such that a frequency dependence of a load impedance provided by the broadband matching network for the amplifying device is reduced.

Broadband matching network

High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.

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Ehrenkirchen, Germany

Anton Labanc