Siltronic Ag

Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Other

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Anton Huber

Peter Wiesner

Alexander Heilmaier

Robert Kreuzeder

Robert Weiss

Wolfgang Gmach

Joerg Moser

Robert Drexler

Helmut Seehofer

Georg Pietsch

Michael Kerstan

Guido Wenski

Thomas Altmann

Joachim Junge

Joachim Mattes

Hans Adolf Gerber

Manfred Schoenhofer

J&ouml;rg Moser

Karl-Heinz Langsdorf

Engelbert Auer

Clemens Radspieler

Peter Wagner

A wire guide roll for use in wire saws for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece is provided with a coating having a thickness of at least 2 mm and at most 7.5 mm of a material which has a Shore A hardness of at least 60 and at most 99, and which contains a multiplicity of grooves through which the sawing wire is guided, the grooves each having a curved groove base with a radius of curvature which is 0.25-1.6 times the sawing wire diameter, and an aperture angle of 60-130&#xb0;. A multiplicity of wafers are simultaneously sliced from a cylindrical workpiece by a wire saw using such wire guide rolls.

Wire guide roll for wire saw and method

A method for slicing wafers from a workpiece includes providing wire guide rolls that each have a grooved coating with a specific thickness, providing a fixed bearing respectively associated with each wire guide roll and providing a sawing wire including wire sections disposed in a parallel fashion. The wire sections are tensioned between the wire guide rolls and are moved relative to the workpiece so as to perform a sawing operation. The wire guide rolls cooled and the fixed bearings are cooled independently of the wire guide rolls.

Method for slicing wafers from a workpiece

A method for cooling a cylindrical workpiece during wire sawing includes applying a liquid coolant to a surface of the workpiece. The workpiece is made of semiconductor material having a surface including two end faces and a lateral face. The method includes sawing the workpiece with a wire saw including a wire web having wire sections arranged in parallel by penetrating the wire sections into the workpiece by an oppositely directed relative movement of the wire sections and the workpiece. Wipers are disposed so as to bear on the surface of the workpiece. The temperature of the workpiece is controlled during the wire sawing using a liquid coolant applied onto the workpiece above the wipers so as to remove the liquid coolant with the wipers bearing on the workpiece surface.

Method for cooling a workpiece made of semiconductor material during wire sawing

A method for slicing wafers from a workpiece includes providing wire guide rolls each having a grooved coating with a specific thickness and providing rings at opposing ends of a first of the coatings of a respective wire guide roll. The rings are fixed exclusively to the first coating. A sawing wire including wire sections disposed in a parallel fashion is tensioned between the wire guide rolls. The wire sections of the sawing wire are moved relative to the workpiece so as to perform a sawing operation. A change in length of the first coating, brought about by a temperature change, is measured by measuring distances between sensors and the rings. The wire guide rolls are cooled in a manner dependent on the measured distances.

Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length L, is performed by: and making right-hand side of the inequality as large as possible, where Lwith i=1 . . . n are for the lengths of the workpieces and Ais a predefined minimum spacing, is satisfied,

Method for simultaneously slicing at least two cylindrical workpieces into a multiplicity of wafers

A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.

Semiconductor wafers with highly precise edge profile and method for producing them

Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.

Method for producing a semiconductor wafer with profiled edge

The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03&#x2013;0.5 &#x3bc;m during one revolution of the semiconductor wafer.

Method for removing material from a semiconductor wafer

A process for producing semiconductor wafers comprises simultaneous grinding of both sides of the semiconductor wafers in a single step, 1S-DDG, wherein this grinding is the only material-removing mechanical machining step which is used to machine the surfaces of the semiconductor wafers. This process produces semiconductor wafers with improved geometry and nanotopology.

Semiconductor wafer with improved local flatness, and method for its production

A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRof less than or equal to 0.13 &#x3bc;m, based on a surface grid of segments with a size of 26 mm&#xd7;8 mm on the front surface, wherein the maximum local height deviation P/V(10&#xd7;10)of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm&#xd7;10 mm. There is also a process for producing a multiplicity of silicon semiconductor wafers by simultaneous double-side polishing between in each case one lower polishing plate and one upper polishing plate, which rotate, are parallel to one another and to which polishing cloth has been adhesively bonded, while a polishing agent, which contains abrasives or colloids, is being supplied, with at least 2 &#x3bc;m of silicon being removed, wherein a predetermined proportion of the semiconductor wafers is at least partially polished using a lower polishing pressure, and a further proportion of the semiconductor wafers is polished using a higher polishing pressure.

Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers

A method for cutting a multiplicity of disks from a hard brittle workpiece is by moving the workpiece at a defined feed rate through a wire web of a wire saw. In the method, the wire web is formed by a sawing wire which moves in a reciprocating manner and is covered with bonded abrasive grain. A cooling liquid is provided beneath the wire web, in which cooling liquid the sawing wire of the wire web is immersed when cutting off the disks. Also provided is a wire saw which is suitable for carrying out the method.

Method and device for cutting a multiplicity of disks from a hard brittle workpiece

A wafer holder chuck has support for fixing a semiconductor wafer during nding. There is a method of producing a semiconductor wafer which has two flat-ground sides and a rounded edge. The wafer holder has a support which is composed of a soft material. The method has the semiconductor wafer fixed on a wafer holder having a soft support during grinding of the first side and has the wafer fixed on a wafer holder having a hard support during grinding of the second side.

Wafer holder and method of producing a semiconductor wafer

A workpiece holder for rotary grinding machines for grinding semiconductor afers has a rotatable work surface which points toward a rotating grinding tool and on which the semiconductor wafer to be machined is laid, and has piezoelectric elements on which the workpiece holder is axially supported. The piezoelectric elements can be operated independently of one another and, when operated, undergo a change in their linear dimension, an operated piezoelectric element axially raising or lowering the workpiece holder at the point at which it supports the workpiece holder. There is also a method for positioning the workpiece holder.

Workpiece holder for rotary grinding machines for grinding semiconductor

A process for manufacturing semiconductor wafers having deformation ground in a defined way.

Growing community of inventors

Burghausen, Germany

Anton Huber