Applied Materials, Inc.

Anton Baryshnikov

Venkatanarayana Shankaramurthy

Mitesh Sanghvi

Karthik Janakiraman

Shuang Liu

Rui Cheng

Diwakar N Kedlaya

Zubin Huang

Abhijit Ashok Kangude

Thorsten Kril

Brett Berens

Peter Standish

Chahal Neema

Vishal Suresh Jamakhandi

Ganesh Balasubramanian

Deenesh Padhi

Visweswaren Sivaramakrishnan

Bok Hoen Kim

Amit Kumar Bansal

Hichem M'Saad

Yi Yang

Paul Brillhart

Amir Hamed Al-Bayati

Derek R Witty

Martin Jay Seamons

Mohamad A Ayoub

Sudha S Rathi

Krishna Nittala

Satish Radhakrishnan

Eller Y Juco

Chiu Chan

Badri N Ramamurthi

Aykut Aydin

Hyung-Joon Kim

Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

Systems and methods for substrate support temperature control

A method includes identifying a recipe for depositing layers on a substrate in a processing chamber of a substrate processing system. The recipe comprises iterations of a set of one or more processes, and wherein each iteration of the iterations is for depositing at least one layer of the layers. The method further includes determining changes to parameters for depositing the at least one layer on the substrate. Each of the changes corresponds to a respective iteration of the iterations and is associated with a relative position of a corresponding layer. The layers are to be deposited on one or more substrates based on the recipe and the changes.

Variable loop control feature

A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers, selectively controlling process fluid flow to the process chamber for a first period of time corresponding to a time value of the set of time values and to a divert foreline of the process chamber for a second period of time.

Process fluid path switching in recipe operations

Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

Controlling concentration profiles for deposited films using machine learning

A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers: causing the process fluid to flow to the processing chamber for a first period of time corresponding to a first time value; and causing the process fluid to flow to a divert foreline of the processing chamber for a second period of time, the second period of time being based on a timestep of the operation and the time value.

A method includes identifying a recipe for depositing a plurality of layers on a substrate in a processing chamber of a substrate processing system. The recipe includes iterations of a set of processes. Each iteration is for depositing at least one layer. The method further includes determining iteration adjustments to cause uniformity of the layers. Each iteration adjustment corresponds to a respective iteration. The method further includes determining multipliers to cause an adjustment in thickness of one or more layers of the layers. Each multiplier of the multipliers corresponds to a corresponding iteration. The method further includes storing the iteration adjustments and the multipliers as stored iteration adjustments and stored multipliers. The layers are deposited on substrates based on the recipe and the stored iteration adjustments and the stored multipliers.

The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Apparatus and method for substrate clamping in a plasma chamber

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Campbell, CA, United States of America

Anton Baryshnikov