Centre National De La Recherche Scientifique

Fagorbrandt Sas

Universite Paris Nord (Paris Xii) Institut Galilee

Universite Claude Bernard – Lyon1

Ecole Polytechnique

Centre National De La Recherche Scientifique-Cnrs

Ahlstrom Corporation

Universite Paris-Xiii

Compagnie Industrielle D'applications Thermiques C.i.a.t.

Universite Paris Nord Institut Galilee

Antoine Rousseau

Joel Barrault

Jean-Michel Tatibouet

Jean-Paul Chevrier

Stephane Pasquiers

Francis Autin

Guillaume Vincent Lombardi

Khaled Hassouni

Xavier Duten

François Silva

Alix Hélène Gicquel

Cécile Ayrault

Stéphane Pasquiers

Olivier Guaitella

Roland Clavel

Jean-Marie Herrmann

Emmanuel Rutman

Frédéric Thevenet

François Fresnet

Alix Helene Gicquel

Francois Silva

Katia Allegraud

Chantal Guillard

Disclosed is a method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma. The plasma that has a finite volume is formed near a substrate (in a vacuum chamber) by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge. The pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power P, in order to obtain carbon-containing radicals in the plasma. These carbon-containing radicals are deposited on the substrate in order to form a diamond film. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm, while maintaining the substrate to a substrate temperature of between 700&#xb0; C. and 1000 &#xb0; C.

High-speed diamond growth using a microwave plasma in pulsed mode

A device for catalytic treatment of cooking smells includes a monolithic support (), including passage channels () for cooking fumes and active treating particles deposited on the monolithic support (), an apparatus for generating a discharge plasma () arranged on either side of the monolithic support.

Device for catalytic treatment of smells and filtering hood equipped therewith

Growing community of inventors

Paris, France

Antoine Rousseau