Georgia Tech Research Corporation

Princeton University

Antoine Kahn

Seth R Marder

Stephen Barlow

Bernard Kippelen

Canek Fuentes-Hernandez

Yinhua Zhou

Yabing Qi

Swagat K Mohapatra

Song Guo

Jens Meyer

Jae Won Shim

Calvin Chan

Sang Bok Kim

The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

N-doping of organic semiconductors by bis-metallosandwich compounds

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.

Systems and methods for producing low work function electrodes

Electron transport material and methods of N-type doping the same are provided.

N-type doping of an electron transport material and methods of use thereof

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Princeton, NJ, United States of America

Antoine Kahn