Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Other

Anthony Zampini

Michael K Gallagher

Owendi Ongayi

Peter Trefonas, Iii

Suzanne M Coley

Vipul Jain

Ashish A Pandya

Charles R Szmanda

Harold Frederick Sandford

David C Madoux

Cong Liu

Gerald B Wayton

George G Barclay

Gary Ganghui Teng

Wang Yueh

Dana A Gronbeck

Amy M Kwok

Zhibiao Mao

Chi Q Truong

Tao Zhang

Jaihyoung Lee

James F Cameron

Deyan Wang

Cheng-Bai Xu

Robert H Gore

Gerhard Pohlers

Edward K Pavelchek

Gary N Taylor

Manuel doCanto

Doris H Kang

James C Woodbrey

Richard C Hemond

Leo L Linehan

Gerald C Vizvary

Pamela Turci

Sungseo Cho

Michael K Templeton

Brian K Daniels

Catherine C Meister

Jinrong Liu

Mark S Thirsk

In a first aspect, methods are provided that comprise: (a) applying a curable composition on a substrate; (b) applying a hardmask composition above the curable composition; (c) applying a photoresist composition layer above the hard mask composition, wherein one or more of the compositions are removed in an ash-free process. In a second aspect, methods are provided that comprise (a) applying an organic composition on a substrate; (b) applying a photoresist composition layer above the organic composition, wherein the organic composition comprises a material that produce an alkaline-soluble group upon thermal and/or radiation treatment. Related compositions also are provided.

Coating compositions for photolithography

Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a component that comprises one or more parabanic acid moieties. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Coating compositions for use with an overcoated photoresist

Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a component that comprises one or more uracil moieties. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Organic coating composition are provided including antireflective coating compositions that can reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing or via-fill layer. Preferred organic coating compositions of the invention comprise one or more resins that can harden upon thermal treatment without generation of a cleavage product. Particularly preferred organic coating compositions of the invention comprise one or more components that comprise anhydride and hydroxy moieties.

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

Coating compositions for use with an overcoated photoresist are provided where the coating composition comprises a resin containing cyanurate groups and hydrophobic groups. The coating composition can enhance resolution of an overcoated photoresist relief image.

Organic coating compositions, particularly antireflective compositions, that comprise a component that comprises one or more parabanic acid moieties. Preferred compositions of the invention can reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and can serve as a planarizing, conformal or via-fill layer.

Cyanurate compositions are provided that are particularly useful as a reagent to form a resin component of a coating composition underlying an overcoated photoresist. Preferred isocyanurates compound comprise substitution of multiple cyanurate nitrogen ring atoms by at least two distinct carboxy and/or carboxy ester groups.

Underlying coating compositions are provided that comprise one or more resins comprising one or more modified imide groups. These coating compositions are particularly useful as antireflective layers for an overcoated photoresist layer. Preferred systems can be thermally treated to increase hydrophilicity of the composition coating layer to inhibit undesired intermixing with an overcoated organic composition layer, while rendering the composition coating layer removable with aqueous alkaline photoresist developer.

The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Antireflective hard mask compositions

Organic coating composition are provided including antireflective coating compositions that can reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing or via-fill layer. Preferred compositions of the invention comprise contain a crosslinker component that is resistant to sublimination or other migration crosslinker from the composition coating layer during lithographic processing.

New polymers are provided that have non-carbon tetravalent species (Si, Ti, Ge, Zr, Sn) and photoimageable compositions that contain such polymers. Preferred polymers are organic, e.g. one or more polymer repeat units comprise carbon atom(s). Particularly preferred are polymers that comprise SiOor TiOrepeat units and which can be highly useful as a resin component of resists imaged at short wavelengths such as sub-300 nm and sub-200 nm.

Si-polymers and photoresists comprising same

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Westborough, MA, United States of America

Anthony Zampini