Solarex Corporation

University of Delaware

Other

General Electric Company

Anthony W Catalano

Rajeewa R Arya

Manjul Bhushan

James G O'Dowd

Charles M Fortmann

Ora J Lee

Allen M Barnett

Robert B Hall

James V Masi

Robert V D'Aiello

Vikram L Dalal

John D Meakin

Richard J Podlesny

John A Brewer

A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.

Multijunction photovoltaic device and fabrication method

A textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another. The tin oxide fabricated by a process comprising steps of depositing a first film of tin oxide on the substrate by chemical vapor deposition from a first reactant mixture of tin chloride, water, and an alcohol and depositing a second film of tin oxide on the first tin oxide film by chemical vapor deposition from a second reactant mixture of tin chloride and water. Where the substrate is ordinary soda lime glass, it preferably is first coated with a film of silicon dioxide. The process permits deposition of substantially uniform layers of tin oxide in a continuous deposition process.

Textured tin oxide

A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure which includes first, second, and third n-layers successively formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.

Enhancement of short-circuit current by use of wide bandgap N-layers in

A method of forming a textured layer of tin oxide on a vitreous substrate in which the thickness and degree of texture of the layer can be controlled independently of one another. The method comprises the steps of depositing a first film of tin oxide on the substrate by chemical vapor deposition from a first reactant mixture of tin chloride, water, and an alcohol and depositing a second film of tin oxide on the first tin oxide film by chemical vapor deposition from a second reactant mixture of tin chloride and water. Where the substrate is ordinary soda lime glass, it preferably is first coated with a film of silicon dioxide. The method permits deposition of substantially uniform layers of tin oxide in a continuous deposition process.

Method of depositing textured tin oxide

Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.

Method for fabricating photovoltaic device having improved short

A photovoltaic device having an increased open circuit voltage includes a body of semiconductor material between layers of opposite conductivity type, one of which has a wide bandgap energy and through which light enters the device. The body includes a first region closest to the wide bandgap layer and a second region with the bandgap energy of the first region being greater than that of the second region and less than or equal to that of the wide bandgap layer.

Photovoltaic device with increased open circuit voltage

A method of fabricating electrically isolated photovoltaic modules arrayed on a substrate by forming overlying front contact strips, photovoltaic strips, and back contact strips on a flat transparent substrate, laser scribing between modules to electrically isolate adjacent modules for the simultaneous testing and electrical curing of the modules on a single substrate, and plasma etching the inter-module grooves formed by the laser isolation step to improve the percentage of modules on a single substrate that pass minimum performance criteria. Also disclosed is an array of electrically isolated, thin-film semiconductor devices fabricated on a single substrate, wherein adjacent semiconductor devices are separated by laser-scribed grooves extending through the devices to the substrate and the walls of the grooves have been etched by plasma etching.

Method of fabricating electrically isolated photovoltaic modules arrayed

A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

Photovoltaic cells employing zinc phosphide

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Thin film photovoltaic device with multilayer substrate

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Growing community of inventors

Rushland, PA, United States of America

Anthony W Catalano