At&t Bell Laboratories

Other

New Jersey Institute of Technology

Lucent Technologies Inc.

At+t Corp.

American Telephone & Telegraph Co., At&t Bell Laboratories

Anthony Thomas Fiory

Gordon Albert Thomas

Glenn B Alers

John C Bean

Leonard C Feldman

Don X Sun

Nuggehalli M Ravindra

Michael Gurvitch

Sufian Abedrabbo

Ravindra M Nuggehalli

Shet Sudhakar

Vijay Kasisomayajula

Dale Richard Harshman

Sudhakar Shet

A semiconductor optical emission device comprising a layer of material containing a plurality of stress variations and adhering to a surface of a semiconductor is described. In one embodiment the semiconductor is an indirect band gap semiconductor and is silicon in one aspect, the material of the layer comprises silicon and metal oxides and is prepared by a sol-gel process including thermal annealing in one aspect. The layer urges a plurality of randomly distributed elastic deformations in the semiconductor that substantially enhances the radiative recombination interactions among free carriers in the semiconductor.

Semiconductor optical emission device

A composition of matter for a layered ionic superconductor comprising a plurality of layers of ions and electronic interaction charges, and having a substantially improved superconducting transition temperature is described. An aspect of the composition includes a first layer comprising a plurality of alkali ions and cesium ions in particular that is adjacent to a second layer comprising a plurality of halogen ions and fluorine ions in particular. The first and second layers contain electronic interaction charges and are separated by a predetermined perpendicular distance. Crystalline structure, ionic properties, superconducting transition temperature, and superfluid density for several embodiments including companion ionic species are described and illustrated. Methods for preparing the several embodiments are provided.

Layered ionic superconductor

Systems and methods for assembling a structure onto a substrate include an array of programmable magnets disposed beneath a substrate, wherein a magnetic field is applied to the structure to levitate the structure above the substrate while the structure is moved relative to the substrate to align the structure with a corresponding recess formed in the substrate. A magnetic field may be applied to translate and rotate the structure relative to the substrate. Differences between or among the programmable magnets regarding magnetic polarity, energized versus de-energized status, and magnetic field strength may be used to move the structure relative to the substrate in conjunction with a closed-loop control system. A bonded substrate assembly and a method of bonding a first wafer to a second wafer include wherein the first wafer includes a projection and the second wafer includes a matching depression. The first and second wafers are bonded together at least in part via magnetic attraction between respective magnetic layers in the projection and the depression.

Method of assembly using array of programmable magnets

A method for assembling and integrating microstructures (pills) onto a substrate. A plurality of patterned recesses are formed on the substrates, the recesses having transverse cross-sections and openings of specific shapes. A hard magnetic layer is deposited at the bottom of each said recess. A guide is positioned over the substrate, the guide having patterned hole shapes matching the shapes of the openings to the patterned recesses with which the holes mate. A collection of the pills is placed atop the guide. The said collection includes members with cross-sections matching the shapes of the openings to the recesses, and each pill is coated at one end with a soft magnetic layer. A moving magnetic field is applied to the collection of pills to agitate the pills, and effect a magnetic attraction between the layers at the ends of the pills and the soft magnetic layer at the bottom of the recesses. The pills fall through the similarly shaped guide holes and into the recesses and are firmly attracted to the bottoms of the recesses by the magnetic attractive forces.

Method of magnetic field assisted self-assembly

In an apparatus and process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first probe, collecting radiation propagating away from the wafer and radiation from the lamps in a second probe, and detecting radiation collected in the respective probes. This procedure further involves deconvolving the multiphase ac component of the signal received from each probe, determining the linear functional relationship of the first probe signal as a function of the second probe signal resulting from time-variations of the energizing current, and using this linear functional relationship along with the signal data according to a mathematical expression to infer the temperature. The probes are oriented such that the first probe samples radiation from a portion of the wafer that subtends an angle .OMEGA..sub.1 from the first probe and the second probe samples radiation from the same portion of the wafer and at least one lamp which subtends a solid angle .OMEGA..sub.2.

Semiconductor processing technique, including pyrometric measurement of

In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe, and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitudes according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitude according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

A method of forming a superconductive metal oxide film on a substrate is disclosed. The method comprises depositing a metal layer on the substrate and heat treating the metal layer in an oxygen-containing atmosphere such that the oxide film is formed therefrom. The metal layer is deposited such that it is substantially free of reactive constituents, e.g., oxygen and/or fluorine, and such that it contains all the metal constitutents that are to be contained in the oxide film. Advantageously, the metal layer is deposited such that the various metal constituents (e.g., Y, Ba, and Cu) are substantially mixed. The inventive method simplifies deposition control since the densities of the metal deposits are well known and constant, and permits relatively rapid deposition (e.g., by DC sputtering) since the targets are not subject to oxidation. A multi-stage heat treatment process, with patterning of the oxide layer carried out at an intermediate stage of the process, that can result in improved pattern definition and can avoid deterioration of the oxide film as a consequence of the patterning, is also disclosed.

Method of producing a superconductive oxide layer on a substrate

A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.

Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si

A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described.

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Summit, NJ, United States of America

Anthony Thomas Fiory