Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Diamond Semiconductor Group, LLC

Anthony Renau

Joseph C Olson

Ludovic Godet

Svetlana Radovanov

John J Hautala

Russell J Low

Christopher R Hatem

Eric D Hermanson

Donna Smatlak

Morgan Evans

Timothy J Miller

Sony Varghese

James S Buff

Peter F Kurunczi

Costel Biloiu

Vikram Singh

Alexandre Likhanskii

Christopher A Rowland

Min Gyu Sung

Bon-Woong Koo

Deepak Arabagatte Ramappa

Paul J Murphy

Atul Gupta

James Paul Buonodono

Piotr R Lubicki

Jun Lu

Xianfeng Lu

Frank Sinclair

Huixiong Dai

Alexander S Perel

Simon Ruffell

Jonathan Gerald England

Tristan Yonghui Ma

Kasegn D Tekletsadik

Kevin M Daniels

D Jeffrey Lischer

Antonella Cucchetti

Leo Klos

Charles M McKenna

Maureen Petterson

Gordon Angel

Thomas R Omstead

Steve Krause

Joe Olson

Nini Munoz

Doug E May

William Davis Lee

Victor M Benveniste

Peter Lawrence Kellerman

Craig Richard Chaney

Kenneth Harry Purser

Neil J Bassom

Shengwu Chang

Jay Thomas Scheuer

Hans-Joachim Ludwig Gossmann

Daniel R Tieger

Naushad K Variam

Robert C Lindberg

Patrick M Martin

Christopher J Leavitt

Alexander C Kontos

Daniel Distaso

Tyler Burton Rockwell

Edwin A Arevalo

Nicholas R White

Tassie Andersen

Manny Sieradzki

Nicholas A Venuto

Marie J Welsch

Leo Vincent Klos, Jr

Kurt Deckerlucke

Keith Pierce

Raymond L Pelletier

A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

Apparatus and techniques for substrate processing using independent ion source and radical source

A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

System and methods using an inline surface engineering source

A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.

Extreme edge uniformity control

An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

Apparatus, system and method for energy spread ion beam

An apparatus may include a scanner, arranged to receive an ion beam, and arranged to deliver a scan signal, defined by a scan period, to scan the ion beam between a first beamline side and a second beamline side. The apparatus may include a corrector module, disposed downstream of the scanner, and defining a variable path length for the ion beam, between the first beamline side and the second beamline side, wherein a difference in propagation time between a first ion path along the first beamline side and a second ion path along the second beamline side is equal to the scan period.

System, apparatus and method for bunched ribbon ion beam

A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

Performance improvement of EUV photoresist by ion implantation

A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.

Gate all around device and method of formation using angled ions

The present disclosure is directed to structures and processing for three-dimensional transistor devices. In some approaches, a method may include providing a plurality of fin structures formed from a substrate, the plurality of fin structures disposed subjacent to a hard mask layer, and directing angled ions at the plurality of fin structures. The angled ions may form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the angled ions etch the plurality of fin structures to form a stack of isolated nanowires within the plurality of fin structures. The method may further include removing the hard mask layer, and forming a stopping layer over the stack of isolated nanowires.

Gate devices and methods of formation using angled ions

A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.

Device structure for forming semiconductor device having angled contacts

An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.

High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture

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West Newbury, MA, United States of America

Anthony Renau