Intel Corporation

Anthony Ozzello

Glen N Wada

Raghupathy V Giridhar

R V Giridhar

A method for making a flash memory having a passivation layer that is not transparent to ultraviolet light. The method forming a semiconductor that includes flash memory cell having floating gate, then forming a the substrate. Process induced charge that has accumulated on the flash cell floating gate is then neutralized and a passivation layer, which is no transparent to ultraviolet light, is formed on the conductive layer.

Flash memory with UV opaque passivation layer

A method for making a flash memory having a passivation layer that is not transparent to ultraviolet light. The method comprises forming a semiconductor substrate that includes a flash memory cell having a floating gate, then forming a conductive layer on the substrate. Process induced charge that has accumulated on the flash cell floating gate is then neutralized and a passivation layer, which is not transparent to ultraviolet light, is formed on the conductive layer.

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San Jose, CA, United States of America

Anthony Ozzello