International Business Machines Corporation

Anthony Mastreani

Lawrence D David

Srinivasa S Reddy

Shaji Farooq

Rao Venkateswara Vallabhaneni

Renuka S Divakaruni

Govindarajan Natarajan

Jon Alfred Casey

Charles Hampton Perry

Lester W Herron

James N Humenik

Donald Rene Wall

Robert W Nufer

Vivek M Sura

Arnold I Baise

Salvatore J Scilla

Farid Youssif Aoude

Hal Mitchell Lasky

Werner E Dunkel

Allen J Dam

Ray M Bryant

John Ulrich Knickerbocker

Sarah Huffsmith Knickerbocker

Ajay Prabhakar Giri

Mark A Takacs

Steven M Kandetzke

John Acocella

George Czornyj

Richard A Bates

Peter A Agostino

David R Clarke

Lovell B Wiggins

Daniel P Kirby

Liang-Choo Hsia

Amy T Matts

Srinivasa S N Reddy

A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias

Copper-based paste containing copper aluminate for microstructural and

A copper-based paste for multilayer ceramic substrate vias and lines including copper particles as the majority constituent of the paste, a refractory metal additive selected from the group consisting of chromium, tantalum, and tungsten, and organic materials. This copper-based paste has particular applicability to the formation of vias and lines in ceramic packages wherein the vias and lines would have a composition principally of copper with additions of the refractory metal.

Copper-based paste containing refractory metal additions for

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

Low dielectric composite substrate

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

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Hopewell Junction, NY, United States of America

Anthony Mastreani