Motorola Corporation

Freescale Semiconductor,inc.

Anthony M Pavio

Lei Zhao

John C Estes

Rodolfo Lucero

Xunhu Dai

Ross A Miesem

William John Thompson

Jenn-Hwa Huang

Wang-Chang A Gu

William M Vassar

Rudolfo Lucero

An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (); an RF component () embedded in the substrate (); a surface mounted component (); and an RF shield () disposed next to the surface mounted component (), wherein the height of the shield () does not extend substantially beyond the height of the surface mounted component (). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.

Localized enhancement of multilayer substrate thickness for high Q RF components

A bidirectional amplifier circuit includes first and second input ports, first and second output ports, a power amplifier, and first, second, third, and fourth filter circuits. The power amplifier includes at least first and second input terminals and first and second output terminals. The first filter circuit is coupled between the first input port and the power amplifier first input terminal. The second filter circuit is coupled between the second input port and the power amplifier second input terminal. The third filter circuit is coupled between the first output port and the power amplifier first output terminal. The fourth filter circuit is coupled between the second output port and the power amplifier second output terminal. Carrier waves of differing frequencies may be injected into the amplifier circuit first and second input ports, and transmitted from the first and second output ports. The configuration provides broadband operation with flat gain and high efficiency at the frequencies of each of the carrier waves.

Bidirectional distributed amplifier

An exemplary system and method for minimizing degradation effects attributed to misalignment in the production of multilayer balun devices is disclosed as comprising inter alia any combination of coupled line folding that effectively provides a degenerate or otherwise reducible representation of line segment components wherein at least about half of the line segments (by, for example, linear distance or by line volume) are substantially orthogonal to the remaining half.

Multilayer balun with high process tolerance

A balun and transformer system ( ) is provided in which a balun ( ) is cascaded between two 4:1 impedance transformers ( ) to form a 16:1 broadband impedance transformation for push-pull amplifier applications ( ). The balun ( ) is configured in a Marchand configuration. The balun and transformers ( ) are formed with coupled lines realized with a very thin layer of ceramic. Additional coupling between the gap in the balun ( ) is achieved by an embedded capacitor ( ) built in the balun's ceramic. DC bias supply ( ) to the power amplifier ( ) is achieved by using the hot plate of decoupling capacitors ( ), which serve as a floating ground plane to the whole application ( ).

Broadband balun and impedance transformer for push-pull amplifiers

A multilayer ceramic structure ( ) includes a first ceramic layer ( ), a second ceramic layer ( ) adjacent to the first ceramic layer, and a transmission line ( ) formed between the first and second ceramic layers. The transmission line includes first and second portions ( ) having a first width, third and fourth portions ( ) formed between the first and second portions and having a second width that is narrower than the first width, and a fifth portion ( ) formed between the third and fourth portions. A probe ( ), comprising a conductively filled via, is attached at one end to the fifth portion, the probe passing through the second ceramic layer for providing a test point ( ). The structure compensates for return loss induced by the probe.

Multilayer ceramic package transmission line probe

A constant &ldquo;R&rdquo; network distributed amplifier formed in a multi-layer, low temperature co fired ceramic structure comprises multiple cascaded constant &ldquo;R&rdquo; networks for amplifying a signal applied thereto. Each one of the multiple cascaded constant &ldquo;R&rdquo; networks is formed in the ceramic structure and includes a plurality of ceramic layers each of which have a top and bottom planar surfaces which, when bonded together form the ceramic structure. A transmission line is formed on the top surfaces of each of the ceramic layers having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.

Tapered constant &ldquo;R&rdquo; network for use in distributed amplifiers

A broadband impedance matching integrated circuit apparatus comprising an alternating current ground plane, a direct current ground plane positioned proximate to the alternating current ground plane, a first conductive transmission line positioned a distance from the alternating current and direct current ground planes, a dielectric material layer with a thickness positioned on the first conductive transmission line, a second conductive transmission line positioned on the dielectric material layer wherein the first and second conductive transmission lines are electrically interconnected to behave as an electromagnetically coupled tapped autotransformer.

Broad band impedance matching device with coupled transmission lines

A stripline integrated circuit apparatus comprising a first ground plane, a stripline section positioned on the first ground plane, the stripline section including N stripline regions where N is a whole number greater than or equal to one, wherein each stripline region includes a stripline sandwiched therebetween a first dielectric layer with a thickness and a second dielectric layer with a thickness where each adjacent stripline is connected in parallel, wherein each adjacent stripline region is separated by a ground plane, a second ground plane positioned on the stripline region, and wherein the plurality of stripline sections are formed and electrically connected in series. The distances between the striplines and the ground planes are adjusted to vary the input and output impedance.

Broad band impedance matching device with reduced line width

A multilayer ceramic micropump including a monolithic ceramic package formed of a plurality of ceramic layers defining therein an integrated first ball check valve, and a second ball check valve in microfluidic communication with the first ball check valve, and an actuator characterized as actuating a pumping motion, thereby pumping fluids through the first ball check valve and the second ball check valve.

Micropump including ball check valve utilizing ceramic technology and method of fabrication

A hybrid low voltage distributed power amplifier structure ( ) provides improved efficiency by forming drain transmission line inductors ( ) on a substrate ( ) while the rest of the amplifier is built in IC form ( ). A wirebond interconnection ( ) is made between the IC's drainline capacitors ( ) and the substrate's drainline inductors ( ) which are a higher impedance point in the circuit. As a result, the wirebond inductance becomes negligible and has little or no impact on the power amplifier's performance.

Hybrid structure for distributed power amplifiers

A microelectromechanical system (MEMS) switch assembly ( ) and a method of forming the MEMBS switch assembly ( ) is provided that includes a switching member ( ) having a first portion ( ) that is at least partially formed with a first material having a first dielectric constant and a second portion ( ) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member ( ) further includes a first lead ( ) spaced apart from a second lead ( ) for contacting the switching member ( ). In operation, the switching member ( ) is configured for movement such that the first portion ( ) and second portion ( ) of the switching member ( ) can provide variable electrical connections between the first lead ( ) and second lead ( ).

Switch assembly and method of forming the same

Methods and apparatus ( ) of amplifying a telecommunication signal ( ) are provided in accordance with the present invention. The apparatus ( ) comprises an input transmission line ( ) configured to receive the telecommunication signal ( ), an output transmission line ( ) configured to provide an amplified output of the telecommunication signal ( ) and N amplifier sections ( ) having a transistor ( ) connected to the input transmission line ( ) and the output transmission line ( ). The apparatus ( ) further comprises a waveform controller ( ) connected to the transistor and also configured to identify a signal level of the telecommunication signal The waveform controller 84 is further configured to generate an independent biasing voltage for the transistor such that the at least one of the N amplifier sections ( ) is configured for active operation and non-active operation based at least in part upon an evaluation of the signal level and an output power of the apparatus is reduced without a substantial degradation in an efficiency of the apparatus.

Methods and apparatus for amplifying a telecommunication signal

A distributed amplifier ( ) and a method ( ) of operating the distributed amplifier ( ) are provided in accordance with the present invention. The distributed amplifier ( ) comprises an input transmission line ( ), an output transmission line ( ) and N amplifier sections ( ) having a transistor ( ) connected to the input transmission line ( ) and the output transmission line ( ). The distributed amplifier ( ) also comprises N independent biasing sources ( ) configured to provide N independent biasing voltages for each transistor ( ) of the N amplifier sections ( ) for active operation, wherein the distributed amplifier ( ) is configured such that when a first independent biasing voltage of said N independent biasing voltages is modified for a first transistor of a first section of the N amplifier sections, the first transistor of the first section of the N amplifier sections is configured for a non-active operation and an output power of the distributed amplifier ( ) is reduced without a substantial degradation in an efficiency of the distributed amplifier ( ).

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Paradise Valley, AZ, United States of America

Anthony M Pavio