Olin Corporation

Arch Specialty Chemicals, Inc.

Planar Solutions, LLC

Anthony M Pasqualoni

Deepak Mahulikar

Paul R Hoffman

Derek E Tyler

Andrew J Brock

Jeffrey S Braden

Satish K Jalota

Sheldon H Butt

Edward F Smith

Jacob Crane

German J Ramirez

George A Brathwaite

Richard J Jenkins

David Dyckman Mills

Larry A LaFollette

Richard McNabb

Brian Mravic, Deceased

Francis S Jewell

Electric guitar

The invention relates to a novel CMP slurry composition used for polishing metals, the composition comprising: (a) a dispersion solution comprising an abrasive; and (b) an oxidizer. The slurry composition has a large particle count of less than about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers

In accordance with the invention, there is provided a chemical-mechanical polishing slurry for polishing a substrate. The slurry is comprised primarily of abrasive particles and an oxidizing agent, wherein the slurry exhibits a stability having a shelf life of at least 30 days.

Ready-to-use stable chemical-mechanical polishing slurries

The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.

Slurry compositions and method for the chemical-mechanical polishing of

There are provided polymer plugs for sealing the vent hole of an adhesively sealed electronic package. The polymer vent hole plug is selected to be either an ultraviolet curable polymer or a thermosetting polymer resin. One effective vent hole plug is a cylindrical plug having a diameter under 1.4 millimeters formed from a UV-curable epoxy.

Polymer plug for electronic packages

A process for producing electronic package components from an aluminum alloy is disclosed. The components have a black color through integral color anodization. The desired color, thickness and surface finish are achieved by regulation of amperage during anodization. The amperage is rapidly raised to in excess of 80 amps per square foot and then allowed to gradually decrease as a function of oxide growth.

Anodized aluminum electronic package components

There is provided an electronic package where the package components define a cavity. A semiconductor device and a portion of a leadframe occupy part of the cavity. Substantially the remainder of the cavity is filled with a compliant polymer, such as a silicone gel. Since the cavity is no longer susceptible to gross leak failure, the seal width of adhesives used to assemble the package may be reduced, thereby increasing the area available for mounting the semiconductor device.

Metal electronic package with reduced seal width

A process for producing electronic package components from an aluminum alloy is disclosed. The components have a black color through integral color anodization. The desired color, thickness and surface finish are achieved by regulation of amperage during anodization. The amperage is rapidly raised to in excess of 70 amps per square foot and then allowed to gradually decrease as a function of oxide growth while the voltage is maintained in excess of 70 volts.

Process for producing black integrally colored anodized aluminum

A metal package for housing an electronic device wherein the electronic device is attached to a severable die attach pad. The die attach pad is bonded to the base of the package with a thermally conductive medium. The base is bonded to the die attach pad and to the leadframe at the same time to reduce the thermal degradation of the sealants. In other embodiments, apertures are provided in the base component to enhance cooling of the electronic device and in the cover component to vent reaction by-products.

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Hamden, CT, United States of America

Anthony M Pasqualoni