Texas Instruments Corporation

Anthony Louis Coyle

Bernhard P Lange

Bernhard Peter Lange

Quang X Mai

Steven Alfred Kummerl

George A Bednarz

William David Boyd

Chris Edward Haga

Samuel D Pritchett

Milton Lee Buschbom

Jeffrey Gail Holloway

Vladimir Alexander Muratov

Leland Scott Swanson

Stefan Wlodzimierz Wiktor

Mohammad Yunus

Min Yu Chan

Chee Kiang Yew

Pang Hup Ong

Yong Khim Swee

A method for fabricating a low resistance, low inductance device for high current semiconductor flip-chip products. A structure is produced, which comprises a semiconductor chip with metallization traces, copper lines in contact with the traces, and copper bumps located in an orderly and repetitive arrangement on each line so that the bumps of one line are positioned about midway between the corresponding bumps of the neighboring lines. A substrate is provided which has elongated copper leads with first and second surfaces, the leads oriented at right angles to the lines. The first surface of each lead is connected to the corresponding bumps of alternating lines using solder elements. Finally, the assembly is encapsulated in molding compound so that the second lead surfaces remain un-encapsulated.

Method for fabricating low resistance, low inductance interconnections in high current semiconductor devices

Disclosed herein is a method of manufacturing a semiconductor package with a solder standoff on lead pads that reach to the edge of the package (non-pullback leads). It includes encapsulating a plurality of die on a lead frame strip. The lead frame strip comprises a plurality of package sites, which further comprises a plurality of lead pads and a die pad. The method also includes forming a channel between the lead pads of nearby package sites without singulating the packages. Another step in the method includes disposing solder on the lead pads, the die pad, or the lead pads and the die pads without substantially covering the channel with solder. The manufacturing method further includes singulating the packages.

Non-pull back pad package with an additional solder standoff

An integrated circuit (IC) includes a substrate having a semiconducting surface, a first array of devices on and in the semiconducting surface including first and second coacting current conducting nodes, a plurality of layers disposed on the substrate and including at a electrically conductive layers and dielectric layer, and a plurality of bump pads on or in the top surface of the dielectric layers. In the IC, the electrically conductive layers define electrical traces, where a first portion of the electrical traces contact a first portion of the bump pads exclusively to a portion of the first coacting current conducting nodes, where a second portion of the electrical traces contact a second portion of the bump pads exclusively to a portion of the second coacting current conducting nodes, and where the electrical traces are electrically isolated from one another by the dielectric layers.

High power integrated circuit device having bump pads

According to an embodiment of the invention, a system, operable to facilitate dissipation of thermal energy, includes a mold compound, a die, a first lead frame, and a second lead frame. The die is disposed within the mold compound, and in operation generates thermal energy. The first lead frame is disposed at least partially within the mold compound and is operable to facilitate transmission of a signal. The second lead frame is disposed at least partially within the compound, at least partially separated from the first lead frame, and is operable to facilitate a dissipation of thermal energy.

Multi lead frame power package

In a method and system for fabricating a thermally enhanced semiconductor device () is packaged as a through hole single inline package (SIP). A leadframe () having a die pad () to attach an IC die (), a first plurality of conductive leads () formed from a first portion of metal sheet (), and a second portion of metal sheet () disposed on an opposite side of the IC die () as the first plurality of conductive leads is stamped from a metal sheet. The first plurality of conductive leads () are arranged in a single line and are capable of being through hole mounted in accordance with the SIP. The second portion of metal sheet () includes the die pad () to form a heat spreader () in the form of the metal sheet. The heat spreader () provides heat dissipating for the heat generated by the IC die ().

Thermally enhanced single inline package (SIP)

A high current semiconductor device (for example QFN for 30 to 70 A) with low resistance and low inductance is encapsulated by molding compound (, heightabout 0.9 mm) so that the second lead surfacesremain un-encapsulated. A copper heat slug () may be attached to chip surface () using thermally conductive adhesive (). Chip surface (), protected by an overcoat () has metallization traces (). Copper-filled windows () contact the traces and copper layers () parallel to traces (). Copper bumps () are formed on each line in an orderly and repetitive arrangement so that the bumps of one line are positioned about midway between the bumps of the neighboring lines. A substrate has elongated leads () oriented at right angles to the lines; the leads connect the corresponding bumps of alternating lines.

High current semiconductor device system having low resistance and inductance

A QFN package and method of making same is provided comprising a substrate having a metal line extending from a connection element on a perimeter region of the substrate to a high current contact pad on interior region of the substrate. A semiconductor chip having an active surface generally faces the interior region of the substrate, wherein a heat-dissipating patterned metal distribution layer is formed over the active surface and electrically connected to an active component thereon. A solder strip electrically and thermally connects the high current contact pad and the metal distribution layer, and a mold compound generally encapsulates the semiconductor chip. The solder strip is generally uniform in depth and surface area, wherein low electrical resistance and inductance is provided between the high current contact pad and the metal distribution layer. An integrated heat sink may be further formed or placed on a passive surface of the chip.

Flip chip package with advanced electrical and thermal properties for high current designs

An integrated circuit chip packaging assembly having a first and second package side. An integrated circuit chip has a substrate side and an active circuit side. The chip includes integrated circuit devices formed on the active circuit side. The active circuit side of the chip is on the first package side. The die pad has at least one runner member extending therefrom, which may be bent toward the first package side. The active circuit side of the chip is attached to the die pad. The die pad is on the first package side relative to the chip. The package mold compound is formed over the die pad, at least part of the chip, and at least part of the runner member(s). At least part of the substrate side of the chip and/or at least part of the runner member(s) may not be covered by the package mold compound.

Growing community of inventors

Plano, TX, United States of America

Anthony Louis Coyle