Xerox Corporation

Samsung Electronics Co., Ltd.

Anthony James Wigglesworth

Yiliang Wu

Ping Liu

Nan-Xing Hu

Brynn Mary Dooley

Adrien Pierre Cote

Barkev Keoshkerian

Yu Qi

Carolyn Patricia Moorlag

Sandra J Gardner

Matthew A Heuft

Cuong Vong

Sarah Jane Vella

Jennifer Alice Coggan

Yulin Wang

Cameron E Derry

A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and an aromatic non-halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. The aromatic non-halogenated aromatic hydrocarbon solvent contains sidechains having at least 2 carbon atoms and the aromatic ring contains at least 3 hydrogen atoms.

Semiconductor composition

An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.

A thixotropic conductive composition is disclosed that can be used to form conductive features on an electronic device. The thixotropic composition comprises a conjugated polymer, a solvent, and multi-wall carbon nanotubes. The conjugated polymer and the solvent are capable of forming a thixotropic fluid. This enables excellent stability of the carbon nanotubes in the composition at a very high loading. The composition has a long shelf life.

Thixotropic composition

A formulation composition for preparing a print head face plate coating includes a sol containing a mixture of monomers including at least one fluoroalkyl alkoxysilane monomer; a solvent; a catalyst; and water. The formulation composition is stable towards gelation for more than 1.5 hours. A method of preparing a print head involves preparing a formulation composition containing a sol prepared from a mixture of monomers including at least one fluoroalkyl alkoxysilane monomer, a solvent, a catalyst, and water; applying the formulation composition as a sol on a surface of the print head; and curing the formulation composition to form a crosslinked siloxane layer on the print head. A method of printing involves using the print head to apply inkjet ink to a substrate.

Formulation composition for fluorinated organosiloxane network

An organo siloxy network film composition including at least one type of tether molecule having a siloxy functionality; at least one type of building block having a siloxy functionality; wherein the tether molecule and the building block each have the same siloxy functionality; and wherein the siloxy functionality in the organo siloxy network film is derived from the same siloxy functionality on both the tether molecules and the building blocks.

Tethered organic siloxy network film compositions

Processes for purifying diketopyrrolopyrrole (DPP) copolymers are disclosed. An organic phase containing the DPP copolymer is treated with an aqueous ammonia solution and then with a palladium scavenger. The DPP copolymer is then isolated, and has a very low palladium content. The resulting DPP copolymer has high mobility.

Processes for purifying diketopyrrolopyrrole copolymers

A semiconductor composition includes a semiconducting polymer containing a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. An electronic device contains a semiconductor layer including a semiconductor composition having a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety and carbon nanotubes dispersed into the semiconducting polymer. A semiconductor composition contains a semiconducting polymer including a diketopyrrolopyrrole (DKPP) moiety, a solvent selected from the group consisting of tetrachloroethane, dichlorobenzene, chlorobenzene, chlorotoluene, and a mixture thereof, and a carbon nanotube.

Semiconductor composites comprising carbon nanotubes and diketopyrrolopyrrole-thiophene based copolymers

An intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. A method of preparing an intermediate transfer member including mixing a coating solution containing siloxyfluorocarbon precursor materials; applying the coating solution as a sol on a substrate; curing the coating solution on the substrate to form an intermediate transfer member containing a layer of a siloxyfluorocarbon networked polymer. The surface free energy of the intermediate transfer member may be from about 10 mN/m to about 40 mN/m. A method of printing an image to a substrate includes applying an inkjet ink to an intermediate transfer member containing a layer of a siloxyflurocarbon networked polymer; spreading the ink onto the intermediate transfer member; inducing a property change of the ink; and transferring the ink to a substrate.

Blanket materials for indirect printing methods

An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The semiconducting layer has been deposited on an alignment layer that has been aligned in the direction between the source and drain electrodes. The resulting device has increased charge carrier mobility.

Electronic device

A semiconducting tetrahydroacridinoacridine compound of Formula (I): wherein Rto Rare as described herein. The compounds are designed to ensure air stability, good solubility, and high mobility.

Semiconductor compound

A thiaxanthenothiaxanthene compound of Formula (I): wherein Rto Rare independently selected from the group consisting of hydrogen, an alkyl group, a substituted alkyl group, an alkoxy group, an alkylthio group, an alkenyl group, a substituted alkenyl group, an ethynyl group, a substituted ethynyl group, an aryl group, a substituted aryl group, a heteroaryl group, a substituted heteroaryl group, a trialkylsilyl group, a fluorohydrocarbon group, a cyano group and a halogen; and wherein the semiconductor of Formula (I) is predominantly crystalline or liquid crystalline. The compounds are designed to ensure air stability, good solubility, and high mobility.

A crosslinked siloxane composition contains the polymerization product of a mixture containing from about 2 to about 12 alkoxysilane precursor materials, where at least one of the alkoxysilane precursor materials is a hydrophilic alkoxysilane precursor material, and at least one of the alkoxysilane precursor materials is a hydrophobic alkoxysilane precursor material. A method of printing an image to a substrate involves applying an inkjet ink to an intermediate transfer member using an inkjet printhead, spreading the ink onto the transfer member, inducing a property change of the ink, and transferring the ink to a substrate, where the intermediate transfer member comprises a crosslinked siloxane composition containing the polymerization product of a mixture comprising from about 2 to about 12 alkoxysilane precursor materials, where at least one of the precursor materials is hydrophilic and at least one is hydrophobic.

Mixed organosiloxane networks for tunable surface properties for blanket substrates for indirect printing methods

An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

Dielectric composition for thin-film transistors

An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

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Oakville, Canada

Anthony James Wigglesworth